Inc.,200HillisStreet,Youngwood,Pennsylvania15697-1800(724)925-7272 CM75DY-24H DualIGBTMOD™H-SeriesModule 75Amperes/1200Volts
D M
E AB
F C
F K C2E1 E2 N(3TYP.)
R H
L C1 S-M5THD(3TYP.) RH G1E1 E2G2 Q-DIA.(2TYP.)
J R .110TABP
G G2E2 C2E1 E2 C1 E1G1 OutlineDrawingandCircuitDiagram DimensionsABCDEFGHJ Inches3.703.150±0.011.571.341.22Max.0.900.850.790.71 Millimeters94.0 80.0±0.2540.034.0 31.0Max.23.021.520.018.0 DimensionsKLMNPQRS Inches0.670.630.510.470.280.256Dia.0.16M5Metric Millimeters17.016.013.012.07.0 Dia.6.54.0M5 Description:PowerexIGBTMOD™Modulesaredesignedforuseinswitchingapplications.EachmoduleconsistsoftwoIGBTTransistorsinahalf-bridgeconfigurationwitheachtransistorhavingareverseconnectedsuper-fastrecoveryfree-wheeldiode.ponentsandinterconnectsareisolatedfromtheheatsinkingbaseplate,offeringsimplifiedsystemassemblyandthermalmanagement. Features:□LowDrivePower □LowVCE(sat)□DiscreteSuper-FastRecovery (135ns)Free-WheelDiode □HighFrequencyOperation(20-25kHz) □IsolatedBaseplateforEasyHeatSinking Applications:□ACMotorControl□Motion/ServoControl□UPS □WeldingPowerSupplies□LaserPowerSupplies OrderingInformation:Example:Selectpletepartmodulenumberyoudesirefromthetablebelow-i.e.CM75DY-24Hisa1200V(VCES),75AmpereDualIGBTMOD™PowerModule. Type CurrentRating VCES Amperes Volts(x50) CM 75 24 257 Powerex,Inc.,200HillisStreet,Youngwood,Pennsylvania15697-1800(724)925-7272 CM75DY-24HDualIGBTMOD™H-SeriesModule75Amperes/1200Volts AbsoluteMaximumRatings,Tj=25°Cunlessotherwisespecified RatingsJunctionTemperatureStorageTemperatureCollector-EmitterVoltage(G-ESHORT)Gate-EmitterVoltageCollectorCurrentPeakCollectorCurrentDiodeForwardCurrentDiodeForwardSurgeCurrentPowerDissipationMax.MountingTorqueM5TerminalScrewsMax.MountingTorqueM6MountingScrewsModuleWeight(Typical)VIsolation *Pulsewidthandrepetitionrateshouldbesuchthatdevicejunctiontemperaturedoesnotexceedthedevicerating. SymbolTjTstg VCESVGES ICICMIFIFMPd –––VRMS StaticElectricalCharacteristics,Tj=25°Cunlessotherwisespecified Characteristics Symbol TestConditions Collector-CutoffCurrent ICES VCE=VCES,VGE=0V GateLeakageCurrent IGES VGE=VGES,VCE=0V Gate-EmitterThresholdVoltage VGE(th) IC=7.5mA,VCE=10V Collector-EmitterSaturationVoltage VCE(sat) IC=75A,VGE=15VIC=75A,VGE=15V,Tj=150°
C TotalGateCharge QG VCC=600V,IC=75A,VGS=15V DiodeForwardVoltage VFM IE=75A,VGS=0V **Pulsewidthandrepetitionrateshouldbesuchthatdevicejunctiontemperatureriseisnegligible. DynamicElectricalCharacteristics,Tj=25°Cunlessotherwisespecified Characteristics Symbol TestConditions InputCapacitance Cies OutputCapacitance Coes VGE=0V,VCE=10V,f=1MHz ReverseTransferCapacitance Cres Resistive Turn-onDelayTime td(on) LoadSwitching RiseTimeTurn-offDelayTime trtd(off) VCC=600V,IC=75A,VGE1=VGE2=15V,RG=4.2Ω Times FallTime DiodeReverseRecoveryTime DiodeReverseRecoveryCharge tf trr IE=75A,diE/dt=–150A/µs Qrr IE=75A,diE/dt=–150A/µs ThermalandMechanicalCharacteristics,Tj=25°Cunlessotherwisespecified Characteristics Symbol TestConditions ThermalResistance,JunctiontoCase Rth(j-c) PerIGBT ThermalResistance,JunctiontoCase Rth(j-c) PerFWDi ContactThermalResistance Rth(c-f) PerModule,ThermalGreaseApplied 258 CM75DY-24H–40to150–40to125 1200±2075150*75150*60017261902500 Units°C°CVoltsVoltsAmperesAmperesAmperesAmperesWattsin-lbin-lbGramsVolts Min. Typ. Max.Units – – 1.0 mA – – 0.5 µ
A 4.5 6.0 7.5 Volts – 2.5 3.4**Volts – 2.25 – Volts – 375 – nC – – 3.5 Volts Min. Typ. Max.Units – – 15 nF – – 5.3

nF – –
3 nF – – 150 ns – – 350 ns – – 250 ns – – 350 ns – – 250 ns – 0.56 – µ
C Min. Typ. Max.

Units – – 0.21°C/W – – 0.47°C/W – – 0.075°C/W Powerex,Inc.,200HillisStreet,Youngwood,Pennsylvania15697-1800(724)925-7272 CM75DY-24HDualIGBTMOD™H-SeriesModule75Amperes/1200Volts COLLECTORCURRENT,IC,(AMPERES) COLLECTOR-EMITTERSATURATIONVOLTAGE,VCE(sat),(VOLTS) OUTPUTCHARACTERISTICS(TYPICAL) 150Tj=25oC1512 125VGE=20V 10011 75 1050
9 25
7 8
0 0
2 4
6 8 10 COLLECTOR-EMITTERVOLTAGE,VCE,(VOLTS) COLLECTOR-EMITTERSATURATIONVOLTAGECHARACTERISTICS (TYPICAL) 10 Tj=25°
C 8IC=150A 6IC=75A
4 20 0 103 IC=30A
4 8 121620 GATE-EMITTERVOLTAGE,VGE,(VOLTS) HALF-BRIDGESWITCHINGCHARACTERISTICS (TYPICAL) tf td(off)102 td(on) VCC=600V VGE=±15V RG=4.2Ω Tj=125°
C tr 101 100 101 102 COLLECTORCURRENT,IC,(AMPERES) REVERSERECOVERYTIME,trr,(ns) EMITTERCURRENT,IE,(AMPERES) COLLECTORCURRENT,IC,(AMPERES) TRANSFERCHARACTERISTICS(TYPICAL) 150 VCE=10V 125 Tj=25°
C Tj=125°
C 100 75 50 25
0 0
4 8 121620 GATE-EMITTERVOLTAGE,VGE,(VOLTS) FREE-WHEELDIODEFORWARDCHARACTERISTICS (TYPICAL) 103 Tj=25°
C COLLECTOR-EMITTERSATURATIONVOLTAGE,VCE(sat),(VOLTS) COLLECTOR-EMITTERSATURATIONVOLTAGECHARACTERISTICS (TYPICAL)
5 VGE=15VTj=25°
C 4 Tj=125°
C 3
2 1 00255075100125150 COLLECTOR-CURRENT,IC,(AMPERES) CAPACITANCEVS.VCE(TYPICAL) 102 CAPACITANCE,Cies,Coes,Cres,(nF) 102 101 1000 0.81.62.43.24.0 EMITTER-COLLECTORVOLTAGE,VEC,(VOLTS) REVERSERECOVERYCHARACTERISTICS(TYPICAL) 103 102 102 trr 101 Irr di/dt=-150A/µsecTj=25°
C 101 100 101 EMITTERCURRENT,IE,(AMPERES) 100102 REVERSERECOVERYCURRENT,Irr,(AMPERES)GATE-EMITTERVOLTAGE,VGE,(VOLTS) 101Cies Coes100 VGE=0Vf=1MHz 10-
1 10-
1 100 Cres 101 102 COLLECTOR-EMITTERVOLTAGE,VCE,(VOLTS) GATECHARGE,VGE20 IC=75A 16VCC=400VVCC=600V 12
8 4 00100200300400500600 GATECHARGE,QG,(nC) SWITCHINGTIME,(ns) 259 Powerex,Inc.,200HillisStreet,Youngwood,Pennsylvania15697-1800(724)925-7272 CM75DY-24HDualIGBTMOD™H-SeriesModule75Amperes/1200Volts NORMALIZEDTRANSIENTTHERMALIMPEDANCE,Zth(j-c)Zth=Rth•(NORMALIZEDVALUE) NORMALIZEDTRANSIENTTHERMALIMPEDANCE,Zth(j-c)Zth=Rth•(NORMALIZEDVALUE) TRANSIENTTHERMAL IMPEDANCECHARACTERISTICS (IGBT) 10110-
3 10-
2 10-
1 100 101 SinglePulseTC=25°C100PerUnitBase=Rth(j-c)=0.21°C/W TRANSIENTTHERMAL IMPEDANCECHARACTERISTICS (FWDi) 10110-
3 10-
2 10-
1 100 101 SinglePulseTC=25°C100PerUnitBase=Rth(j-c)=0.47°C/W 10-
1 10-110-
1 10-
1 10-
2 10-210-
2 10-
2 10-
3 10-
5 TIME,(s) 10-
4 10-310-
3 10-
3 10-
5 TIME,(s) 10-
4 10-310-
3 260