–OCTOBER2011 与USB完全兼容的完全集成双输入开关模式单节锂离子充电器和USB-OTG支持 查询样品:bq24140 1特性 •用于单节锂离子和锂聚合物电池组的高有效性迷你USB/AC电池充电器 •在为电池充电的同时提供USB-OTG支持•高准确度电压和电流调节 –输入电流调节准确度:±5%(100mA,500mA)–充电电压调节准确度:±0.5%(25°C),±1% (0-125°C)–充电电流调节准确度:±5%•用于USBOTG的升压模式操作:–输入电压范围(电池供电):2.3Vto4.5V–VBUS输出:5.05V/500mA•基于动态电源管理的输入电压提供电流限制适配器的保护•故障适配器检测和抑制•通过限制最大充电电压和最大充电电流安全限制寄存器提供附加的安全•20-V绝对最大输入电压等级•9.0-V最大工作输入电压•比线性充电器更快的充电•内置输入电流感应和限制•集成了功率FET，充电率高达1.5A •经I2C接口(高达3.4Mbps)设定的可编程充电参数:–输入电流–快速充电/终止电流–充电电压(3.5-4.44V)–具有重置控制的安全定时器–具有重置控制的安全定时器–终止使能 •同步固定频率PWM控制器工作在3MHz，占空比0%至99.5% •用于低功耗的自动高阻抗模式•强健的保护 –反向漏电保护防止电池漏电–热调整及保护–输入/输出过压保护•充电和故障的状态输出•USB友好型启动序列•2.35×2.65mm30-引脚WCSP封装 应用 •手机与智能电话•MP3播放器•手持式设备 ACAdapterorWirelessPowerUSBAdapter 10kW10kW10kW 10kW10kW10kWHOST 1mF4.7mF 4.7mF 4.7mF PMID1 VIN VBUS PMID2SW1 BOOT1SW2 BOOT2 1mH100nF 1mH 100nF SCLSDASTATOTGSLRSTDIS CSINVBATVREF 1mF VREG LED GND 0.1mF 68mW10µF47µ
F PACK++ PACK-
1 Pleasebeawarethatanimportantnoticeconcerningavailability,standardwarranty,anduseincriticalapplicationsofTexasInstrumentssemiconductorproductsanddisclaimerstheretoappearsattheendofthisdatasheet. PRODUCTIONDATAinformationiscurrentasofpublicationdate.ProductsconformtospecificationsperthetermsoftheTexasInstrumentsstandardwarranty.Productionprocessingdoesnotnecessarilyincludetestingofallparameters. 版权©2011,TexasInstrumentsIncorporatedEnglishDataSheet:SLUSAO5 bq24140 ZHCS396–OCTOBER2011 Thesedeviceshavelimitedbuilt-inESDprotection.TheleadsshouldbeshortedtogetherorthedeviceplacedinconductivefoamduringstorageorhandlingtopreventelectrostaticdamagetotheMOSgates. 说明 bq24140是一款紧凑、灵活、高效、USB友好的开关模式充电管理设备，此设备适用于广泛便携式应用中使用的单节锂离子和锂聚合物电池。
可通过I2C接口对充电参数进行编程。
此IC集成了两个将同步PWM控制器、功率MOSFET、输入电流感应、高准确度电流和电压调节以及充电终止功能集成到一个小型WCSP封装中。
电池充电发生于以下三个阶段：调节、恒定电流和恒定电压。
输入电流值由主机自动限制。
当达到用户可选最低电流水平时，充电被终止。
具有重置控制的安全定时器为I2C接口提供安全备份。
在正常操作下，如果电池电压降到低于内部阀值的时候，IC自动重启充电周期，当输入供电被移除时，IC自动进入睡眠模式或者高阻抗模式。
可使用I2C接口将充电状态报告给主机。
在充电过程中，IC监视它的结点温度(TJ)并且一旦TJ增加到125°C典型值，IC将降低充电电流。
为了支持USBOTG设备，IC能通过对电池电压升压来提供VBUS(典型值5.05V)。
此IC采用30-引脚WCSP封装。
DEVICEINFORMATION PINOUT(TOPVIEW)
1 2
3 4
5 ABOOTVREFVREGSDABOOT1
B VIN VIN SCLVBUSVBUS CPMID2PMID2SLRSTPMID1PMID1
D SW2 SW2 DIS SW1 SW1
E GND GND GND GND GND
F LED OTG CSINVBATSTAT PIN NAME NO. BOOT A1 VREF A2 VREG A3 SDA A4 BOOT1 A5 VIN B1–B2 SCL B3 VBUS B4–B5 PMID2C1–C2 SLRST C3 PINFUNCTIONS I/O DESCRIPTION OBoot-strappedcapacitorforthehigh-sideMOSFETgatedriver.Connecta100nFceramiccapacitor(voltageratingabove10V)fromBOOTpintoSW2pin. OInternalbiasregulatorvoltage.Connecta1µFceramiccapacitorfromthisoutputtoPGND.OVoltageregulator.2.5Vwith10mAcurrentcapability.Connecta0.1μFceramiccapacitortogroundI/OI2Cinterfacedata.Connecta10-kΩpull-upresistorto1.8Vrail.OBoot-strappedcapacitorforthehigh-sideMOSFETgatedriver.Connecta100nFceramiccapacitor(voltage ratingabove10V)fromBOOT1pintoSW1pin.IChargerinputvoltage.Bypassitwitha1μFceramiccapacitorfromVINtoGND.II2Cinterfaceclock.Connecta10-kΩpull-upresistorto1.8Vrail.I/OChargerinputvoltage.Bypassitwitha4.7μFceramiccapacitorfromVBUStoGND.Thispinalsoprovidesthe outputoftheboostconverterwheninBoostMode.OConnectionpointbetweenreverseblockingFETandhigh-sideswitchingFET.Bypassitwithaminimumof 3.3μFcapacitorfromPMID2toGND.Safetylimitregistercontrol.WhenSLRST=0,allthesafetylimitvaluesareresettodefaultvalues,regardlessIofthewriteactionstothesafetylimitsregisters.WhenSLRST=1,thehostcanprogramthesafetylimitsregisteruntilanywriteactiontootherregisterslockstheprogrammedsafetylimits.
2 Copyright©2011,TexasInstrumentsIncorporated bq24140 ZHCS396–OCTOBER2011 PIN NAME NO. PMID1C4–C5 SW2 D1–D2 DIS D3 SW1GNDLED D4–D5E1–E5 F1 OTG F2 CSIN F3 VBAT F4 STAT F5 PINFUNCTIONS(continued) I/O DESCRIPTION OConnectionpointbetweenreverseblockingFETandhigh-sideswitchingFET.Bypassitwithaminimumof3.3μFcapacitorfromPMID1toGND. OInternalswitchtooutputinductorconnection. Chargedisablecontrolpin.DIS=0,chargeisenabled.DIS=1,chargeisdisabled.VINandVBUSpinsarehighIimpedancetoPGND.In15minmode,DIS=1willresetthe15mintimer;whilein32smode,DIS=1willNOT resetthe32-secondtimer. OInternalswitchtooutputinductorconnection. Groundpins. OHighsideLEDdriver.Current,onandofftimescanbeprogrammedthroughI2Ctoselectdifferentmodes. BoostmodeenablecontrolandVBUSinputcurrentlimitingselectionpin.WhenOTGisinactivestatusperthecontrolregister,VBUSconverterwillbeforcedtooperateinboostmode.IthashigherpriorityoverI2CcontrolIandcanbedisabledthroughcontrolregister.ThepolarityofOTGactivestatuscanalsobecontrolled.AtPOR,theOTGcontrolregisterisignoredandtheOTGpinisusedastheinputcurrentlimitingselectionpinforVBUSconverter.WhenOTG=High,IIN_LIMIT=500mAandwhenOTG=Low,IIN_LIMIT=100mA. IChargecurrent-senseinput.Batterycurrentissensedviathevoltagedropacrossanexternalsenseresistor.A0.1μFceramiccapacitortoGNDisrequired. IBatteryvoltageandcurrentsenseinput.Bypassitwithaceramiccapacitor(minimum0.1µF)toGNDiftherearelonginductiveleadstobattery. Chargestatuspin.Pulllowwhenchargeinprogress.Opendrainforotherconditions.Duringfaults,a128µSOpulseissentout.STATpincanbedisabledbytheEN_STATbitincontrolregister.STATcanbeusedtodrive aLEDmunicatewithahostprocessor. ABSOLUTEMAXIMUMRATINGS
(1) overoperatingfree-airtemperaturerange(unlessotherwisenoted) Supplyvoltagerange(withrespectVBUS,VINtoGND) Inputvoltagerange(withrespecttoandGND) SCL,SDA,OTG,CSIN,VREG,VBAT,SLRST,DIS,LED PMID1,PMID2,STAT Outputvoltagerange(withrespectVREF toandGND) BOOT,BOOT1 SW1,SW2 VoltagedifferencebetweenCSINandVBATinputs(VCSIN-VBAT) Outputsink STAT Outputcurrent(average) SW1,SW2 TAOperatingfree-airtemperaturerange TJJunctiontemperaturerange TstgStoragetemperature ESDRating
(3) HumanbodymodelatallpinsMachinemodelChargedevicemodel VALUE MIN MAX –
2 20 –0.3
7 –0.3 20 6.5 –0.7 20 –0.7 12 ±
7 101.5
(2) –30 +85 –40 +125 –45 +150 ±2000 ±100 ±500 UNIT VV
V VmAA°C°C°
C V
(1)Stressesbeyondthoselistedunderabsolutemaximumratingsmaycausepermanentdamagetothedevice.Thesearestressratingsonly,andfunctionaloperationofthedeviceattheseoranyotherconditionsbeyondthoseindicatedundermendedoperatingconditionsisnotimplied.Exposuretoabsolute-maximum-ratedconditionsforextendedperiodsmayaffectdevicereliability.
(2)Dutycycleforoutputcurrentshouldbelessthan50%for10-yearlifetimewhenoutputcurrentisabove1.25A
(3)Thehumanbodymodelisa100-pFcapacitordischargedthrougha1.5-kΩresistorintoeachpin. Copyright©2011,TexasInstrumentsIncorporated
3 bq24140 ZHCS396–OCTOBER2011 THERMALINFORMATION THERMALMETRIC
(1) θJAθθJBψJTψJBθJCbot Junction-to-ambientthermalresistanceJunction-to-case)thermalresistanceJunction-to-boardthermalresistancecharacterizationparameterJunction-to-boardcharacterizationparameterJunction-to-case(bottom)thermalresistance
(1)有关传统和新的热度量的更多信息，请参阅IC封装热度量应用报告SPRA953。
bq24140WCSPPACKAGE 30PINS79.50.344.40.344.4n/a UNITS°C/W RECOMMENDEDOPERATINGCONDITIONS VBUSVINTJ SupplyvoltageSupplyvoltageOperatingjunctiontemperaturerange MINNOMMAXUNIT 4.0 6
(1)
V 4.0 9
(1)
V –40 125°
C
(1)TheinherentswitchingnoisevoltagespikesshouldnotexceedtheabsolutemaximumratingoneithertheBOOTorSWpins.Atightlayoutminimizesswitchingnoise. ELECTRICALCHARACTERISTICS CircuitofFigure1,VBUS=5V,HZ_MODE=
0,OPA_MODE=
0,CD=
0,TJ=–40°C–125°CandTJ=25°Cfortypicalvalues PARAMETER TESTCONDITIONS MINTYPMAXUNIT INPUTCURRENTS IVBUS VBUSsupplycurrentforcontrol VBUS>VMIN,PWMswitchingVBUS>VMIN,PWMNOTswitching 10mA
5 0°CC,CD=1orHZ_MODE=
1 33 80 μ
A IVIN VINsupplycurrentforcontrol VIN>VMIN,PWMswitching VIN>VMIN,PWMNOTswitching 0°CC,CD=1orHZ_MODE=
1,NoloadonVREG 10mA 5150μ
A IIN_LEAK Laenadk/aogreVcIuNrrentfrombatterytoVBUSpin0°CC,VVBAT=4.2V,HighImpedancemode 5μ
A Batterydischargecurrentinhighimpedancemode,(CSIN,VBAT,SWpins) 0°CC,VVBAT=4.2V,HighImpedancemode,SCL,SDA,OTG=0Vor1.8V 23μ
A VOLTAGEREGULATION VOREG Outputchargevoltage Operatinginvoltageregulation,programmable 3.5 4.44
V TA=25°
C –0.5% 0.5% Voltageregulationuracy Overmendedoperatingtemperature –0.75% 0.75 % 4.1V–4.35Vrange,overmendedoperatingtemperature –0.6% 0.4% CURRENTREGULATION-FASTCHARGE VIN,VLOWV≤VVBATVSLP,RSNS=68mΩ,LOW_CHG=
0,Programmable 550 1550 IOCHARGE Outputchargecurrent VBUS,VLOWV≤VVBATVSLP,RSNS=68mΩLOW_CHG=
0,Programmable 550 1250mA VLOWV≤VVBATVSLP,RSNS=68mΩLOW_CHG=
1 325350 RegulationuracyforchargecurrentacrossRSNS,VIREG=IOCHARGE×RSNS 37.4mV≤VIREG -3% 3% WEAKBATTERYDETECTION VLOWV Weakbatteryvoltagethreshold Programmable 3.4 3.7
V Weakbatteryvoltageuracy –5% 5%
4 Copyright©2011,TexasInstrumentsIncorporated bq24140 ZHCS396–OCTOBER2011 ELECTRICALCHARACTERISTICS(continued) CircuitofFigure1,VBUS=5V,HZ_MODE=
0,OPA_MODE=
0,CD=
0,TJ=–40°C–125°CandTJ=25°Cfortypicalvalues PARAMETER TESTCONDITIONS MINTYPMAXUNIT DeglitchtimeforweakbatterythresholdRisingvoltage,2-mVoverdrive,tRISE=100ns 30 ms HysteresisforVLOWV Batteryvoltagefalling 100 mV DIS,SLRSTandOTGPINLOGICLEVEL VIL Inputlowthresholdlevel 0.4
V VIH Inputhighthresholdlevel 1.3
V CHARGETERMINATIONDETECTION ITERM Terminationchargecurrent VVBAT>VOREG-VRCH,VBUS>VSLP,RSNS=68mΩ,Programmable 50 400mA Deglitchtimeforchargetermination Bothrisingandfalling,2-mVoverdrive,tRISE,tFALL=100ns 30 ms Regulationuracyfortermination currentacrossRSNSVIREG_TERM=IOTERM×RSNS 3.4mV≤VIREG_TERM≤6.8mV6.8mVV DeglitchtimeforVBUSrisingaboveVIN(MIN) Risingvoltage,2-mVoverdrive,tRISE=100ns 30 ms HysteresisforVIN(MIN) Inputvoltagerising 100 200mV ISHORT CurrentsourcetoGND Duringbadadaptordetection 20 30 40mA TINT Detectioninterval Inputpowersourcedetection
2 S INPUTBASEDDYNAMICPOWERMANAGEMENT VIN_LOW ThethresholdwheninputbasedDPMloopkicksin Chargemode,programmable 4.2 4.76
V DPMloopkick-inthresholdtolerance –2% +2% INPUTCURRENTLIMITING IIN_LIMIT Inputcurrentlimit IIN=100mAIIN=500mA TJ=0°C–125º
C 88 93 98 mA TJ=–40ºC–125º
C 86 93 98 TJ=0ºC–125ºCTJ=–40ºC–125º
C 450 475500 mA 440 475500 VREFBIASREGULATOR VREF Internalbiasregulatorvoltage VIN>VREF,IVREF=1mA,CVREF=1μ
F 5.5 6.5
V VREFoutputshortcurrentlimit 30 mA BATTERYRECHARGETHRESHOLD VRCH Rechargethresholdvoltage BelowVOREG 90 120160mV Deglitchtime VVBATdecreasingbelowthreshold,tFALL=100ns,10-mVoverdrive 130 ms STATOUTPUT Low-leveloutputsaturationvoltage, VOL STATpin IO=10mA,sinkcurrent 0.55
V High-levelleakagecurrentforSTAT VoltageonSTATpinis5V 1μ
A LEDOUTPUT VLED_MIN MinimumLEDoperatingvoltage 2.5
V ILED1=
L,ILED0=
L 0 ILED LEDcurrent,programmable ILED1=
L,ILED0=HILED1=
H,ILED0=
L 1.35mA 2.7 ILED1=
H,ILED0=
H 5.4 LEDcurrenturacy –20% +20% VDO Drop-outvoltageofLED VBAT=2.5V 100200mV TONT(1u0r%n–o9n0t%im)eforcurrentsource 100 μs TOFF Turnofftimeforcurrentsource(90%–10%) 100 μs I2CBUSLOGICLEVELSANDTIMINGCHARTERISTICS Copyright©2011,TexasInstrumentsIncorporated
5 bq24140 ZHCS396–OCTOBER2011 ELECTRICALCHARACTERISTICS(continued) CircuitofFigure1,VBUS=5V,HZ_MODE=
0,OPA_MODE=
0,CD=
0,TJ=–40°C–125°CandTJ=25°Cfortypicalvalues PARAMETER TESTCONDITIONS MINTYPMAXUNIT VOL Outputlowthresholdlevel IO=10mA,sinkcurrent 0.4
V VIL Inputlowthresholdlevel V(pull-up)=1.8V,SDAandSCL 0.4
V VIH Inputhighthresholdlevel V(pull-up)=1.8V,SDAandSCL 1.2
V I(bias) Inputbiascurrent V(pull-up)=1.8V,SDAandSCL
1 μ
A fSCL SCLclockfrequency 3.4 MHz BATTERYDETECTION IDETECT Batterydetectioncurrentbeforechargedone(sinkcurrent)
(1) Beginsafterterminationdetected -0.5 mA tDETECT Batterydetectiontime 262 ms tDETECT2 BatterydetectiontimeafterlinearchargepleteandPWMstarts 262 ms SLEEPCOMPARATOR VSLP Sleep-modeentrythreshold,VBUS-VVBATorVIN–VVBAT 2.3V≤VVBAT≤VOREG,VBUSorVINfalling
0 40100mV VSLP-EXIT Sleep-modeexithysteresis 2.3V≤VVBAT≤VOREG 70 110200mV DeglitchtimeforVBUSorVINrisingaboveVSLP+VSLP_EXIT Risingvoltage,2-mVoverdrive,tRISE=100ns 30 ms UNDER-VOLTAGELOCKOUT(UVLO) VUVLO ICactivethresholdvoltage VBUSorVINrising 3.05 3.33.65
V VUV_HYS ICactivehysteresis VBUSorVINfallingfromaboveVUVLO 90 100 mV PWM VBOOT VoltagefromBOOT1pintoSW1pin,orVoltagefromBOOT2 pintoSW2pin 6.5
V RON_Q1 reverseblockingMOSFETon-resistance IIN_LIMIT=500mA,MeasuredfromVINtoPMID2 100150mΩ RON_Q2 N-channelSwitchingMOSFETon-resistance MeasuredfromPMID2toSW2,VBOOT2–VSW2=4V 120200mΩ RON_Q3 InternalbottomN-channelMOSFETon-resistance MeasuredfromSW2toGND 110200mΩ RON_Q4 reverseblockingMOSFETon-resistance IIN_LIMIT=500mA,MeasuredfromVBUStoPMID1 100150mΩ RON_Q5 N-channelSwitchingMOSFETon-resistance MeasuredfromPMID1toSW1,VBOOT1–VSW1=4V 120200mΩ RON_Q6 InternalbottomN-channelMOSFETon-resistance MeasuredfromSW1toGND 110200mΩ fOSC Oscillatorfrequency 3.0 MHz Frequencyuracy –10% 10% DMAX Maximumdutycycle 99.5% DMIN Minimumdutycycle
0 Synchronousmodetonon-synchronousmodetransitioncurrentthreshold
(2) Low-sideMOSFETcycle-by-cyclecurrentsensing 100 mA CHARGEMODEPROTECTION VOVP-VIN InputOVPforVIN Risingedge 9.6 9.810.0
V VOVPVINhysteresis 140 mV VOVP-VBUSInputOVPforVBUS Risingedge 6.3 6.56.7
V VOVPVBUShysteresis 170 mV VOVP OutputOVPthresholdvoltage VVBATthresholdoverVOREGtoturnoffchargerduringcharge 110 117121%VOREG VOVPhysteresis LowerlimitforVVBATfallingfromaboveVOVP 11 %VOREG ILIMIT Cycle-by-cyclecurrentlimitforcharge Chargemodeoperation 1.8 2.43.0
A VSHORT Trickletofastchargethreshold VVBATrising 2.0 2.12.2
V VSHORThysteresis 100 mV ISHORT Tricklechargechargingcurrent VVBAT≤VSHORT 20 30 40mA
(1)Negativechargecurrentmeansthechargecurrentflowsfromthebatterytocharger(dischargingbattery).
(2)BottomN-channelMOSFETalwaysturnsonfor~60nsandthenturnsoffifcurrentistoolow.
6 Copyright©2011,TexasInstrumentsIncorporated bq24140 ZHCS396–OCTOBER2011 ELECTRICALCHARACTERISTICS(continued) CircuitofFigure1,VBUS=5V,HZ_MODE=
0,OPA_MODE=
0,CD=
0,TJ=–40°C–125°CandTJ=25°Cfortypicalvalues PARAMETER TESTCONDITIONS MINTYPMAXUNIT BOOSTMODEOPERATIONFORVBUS(OPA_MODE=
1,HZ_MODE=
0,VBUSinputonly) VBUS_BOOSTBoostoutputvoltage(toVBUSpin) 2.5VV Boostoutputvoltageuracy Includinglineandloadregulation -3% +3% IBOOST Maximumoutputcurrentforboost VBUS=5.05V,2.5VA VBUSOVP Overvoltageprotectionthresholdforboost(VBUSpin) ThresholdoverVBUStoturnoffconverterduringboost 5.8 6.06.2
V VBUSOVPhysteresis VBUSfallingfromaboveVBUSOVP 162 mV VBATMAX Mpina)ximumbatteryvoltageforboost(VBATVVBATrisingedgeduringboost 4.654.754.85
V VBATMAXhysteresis VVBATfallingfromaboveVBATMAX 70 mV VBATMIN Minimumbatteryvoltageforboost(VBATpin) DuringboostingBeforebooststarts 2.3V 2.82.97 Boostoutputresistanceathigh-impedancemode(FromVBUStoPGND) CD=1orHZ_MODE=
1 500 kΩ ICC_BOOSOperationquiescentcurrentinboost
T mode NoloadatVBUS,powersavemode,VVBAT=4V,boosting 650 µ
A PROTECTION TSHTDWN Thermaltrip 165 °
C Thermalhysteresis 10 °
C TCF Thermalregulationthreshold Chargecurrentbeginstotaperdown 120 °
C T32S Timeconstantforthe32-secondtimer 32secondmode 15 32
S T15M Timeconstantforthe15-minutetimer 15minutemode 12 15Minute VREG VREG VREGRegulator ILOAD=1mA,CREG=0.1µ
F,VIN>VUVLO 2.34 2.62.86
V ILIMVREG CurrentlimitVREG VREG=0V 10 mA Copyright©2011,TexasInstrumentsIncorporated
7 bq24140 ZHCS396–OCTOBER2011 TYPICALAPPLICATIONCIRCUITS VIN=5VorVBUS=5V,ICHARGE=1550mA,VBAT=3.5--4.44V(Adjustable),SafetyTimer=15minutesor32seconds ACAdapterorWirelessPowerUSBAdapter 10kW10kW10kW 10kW10kW10kW HOST 1mF4.7mF 4.7mF 4.7mF PMID1 VIN VBUS PMID2SW1 BOOT1SW2 BOOT2 1mH 100nF 1mH 100nF SCLSDASTATOTGSLRSTDIS CSINVBATVREF 1mF VREG LED GND 0.1mF 68mW10µ
F 47µ
F PACK+ + PACK- Figure1.I2CControlled1-CellUSBandACorWirelessPowerChargerApplicationCircuit
8 Copyright©2011,TexasInstrumentsIncorporated bq24140 ZHCS396–OCTOBER2011 VIN=5VorVBUS=5V,ICHARGE=1550mA,VBAT=3.5--4.44V(Adjustable),SafetyTimer=15minutesor32seconds BLOCKDIAGRAM PMID2PMID2 VINVIN PMID1PMID1VBUSVBUS Q1 VREF + ChargePump VIN_DPM + IIN_LIM - Q4 VREFChargePump + VBUS_DPM - + IBUS_LIM - VBUS+VBUSUVLO- VIN+VINUVLO- VBUS+VBUSOVP- VIN+VINOVP- TJ+TSHTDWN- VBAT+VBATOVP- VBAT+VOREG-VRCH- VBUSUVLOVINUVLOVBUSOVP VINOVPTSHUTBATOVPRecharge Q2 OSC CBCCurrentLimit PWMControllerQ3 CBCCurrentLimit Q5 PMID2 PWMChargeLinearChg 2.5V,10mA(backtobackswitches) Q6 TREG + +- ICHG TJ + VREF -VOREG ISHORT VBUSPoorSource +VBUS-VBUSMIN VINPoorSource ChargeControl,TimerandDisplay Logic PWMCharge +VIN Ref&Bias - VINMIN PMID1+VBAT - VSHORT PMID2VBAT LED VBUS+VBAT- SleepVBUS GNDGNDGNDGNDGND VIN+ SleepVIN VBAT- VCSINVBATITERM Recharge +- Termination I2CControl SW2SW2 SW1SW1VREGCSINVBAT BOOTVREFBOOT1 LEDSTAT DISSLRSTOTGSDASCL Figure2.bq24140BlockDiagram Copyright©2011,TexasInstrumentsIncorporated
9 bq24140 ZHCS396–OCTOBER2011 TYPICALPERFORMANCECHARACTERISTICS Figure3.VBUStoVINCharging–DefaultModeC1:VIN,CH2:IVBUS,CH3:IVIN,CH4:VBUS Figure4.VINChargingandremoved,switchtoVBUS–DefaultModeC1:VIN,CH2:IVBUS,CH3:IVIN,CH4:VBUS 10 Copyright©2011,TexasInstrumentsIncorporated bq24140 ZHCS396–OCTOBER2011 Figure5.VBUSDynamicPowerManagement(DPM)–C1:VIN,CH2:IVBUS,CH3:VBUS,CH4:STAT Figure6.VBUSDynamicPowerManagement(DPM)–CH1:VIN,CH2:STAT,CH3:VBAT,CH4:IVIN Copyright©2011,TexasInstrumentsIncorporated 11 bq24140 ZHCS396–OCTOBER20110.950.930.91 Efficiency325Efficiency550 Efficiency950 0.89 Efficience-% 0.87 Efficiency12500.85 0.83 0.81 0.79 0.77 0.75
2 2.5
3 3.5
4 4.5 VBAT-BatteryVoltage-
V Figure7.VBUSEfficiencyversusBatteryVoltage 0.95VBATat4.2VVBATat4V 0.93VBATat3.6V 0.91 0.89 Efficience-% 0.87VBATat3V 0.85VBATat2.5V 0.83 0.81 0.79 0.77 0.750 0.2 0.4 0.6 0.8
1 ICHG-ChargeCurrent-
A 1.2 1.4 Figure8.VBUSEfficiencyversusChargeCurrent 12 Copyright©2011,TexasInstrumentsIncorporated Efficience-% Efficience-% 0.95Efficiency325 Efficiency5500.93 Efficiency950 0.91 0.89 0.87 0.85 Efficiency1.550.83 0.81 0.79 0.77 0.752 0.950.930.91 2.5
3 3.5
4 4.5 VBAT-BatteryVoltage-
V Figure9.VINEfficiencyversusBatteryVoltage VBATat4.2VVBATat4VVBATat3.6V 0.89 0.87VBATat3V 0.85VBATat2.5V 0.83 0.81 0.79 0.77 0.750 0.2 0.4 0.6 0.8
1 1.2 1.4 ICHG-ChargeCurrent-
A Figure10.VINEfficiencyversusChargeCurrent bq24140 ZHCS396–OCTOBER2011 5 1.6 Copyright©2011,TexasInstrumentsIncorporated 13 bq24140 ZHCS396–OCTOBER2011 Figure11.ChargeCurrentResponse–550mAto1.55ACH1:VIN,CH2:VBAT,CH3:IBAT,CH4:IVIN Figure12.InputCurrentRegulationResponse–100mAtoNoLimitCH1:VIN,CH2:VBAT,CH3:IBAT,CH4:IVIN 14 Copyright©2011,TexasInstrumentsIncorporated 2%1%0%-1% VIN=5V,VBAT=3.6VVIN=5V,VBAT=3V VIN=5V,VBAT=4V -2%-3%-4%-5% VBUS=5V,VBAT=3.6VVBUS=5V,VBAT=4VVBUS=5V,VBAT=3V -6%
0 20 40 60 80 100 Figure13.TypicalChargeCurrenturacy bq24140 ZHCS396–OCTOBER2011 120 Figure14.VBUSOTGinPFMMode Copyright©2011,TexasInstrumentsIncorporated 15 Efficiency(%) bq24140 ZHCS396–OCTOBER2011 92 91 90 89 88 87 860.10.150.20.250.30.350.40.450.50.55BoostOutputcurrent(A) Figure15.VBUSOTGEfficiency DETAILEDFUNCTIONALDESCRIPTION Thebq24140isahighlyintegrateddualinputswitch-modebatterychargerwithUSB-OTGsupport.Duetotheswitch-modearchitecture,itprovidesthecapabilityofchargingthebatteryfasterthantraditionallinearchargersintheeventthatthepowersourceiscurrentlimited,suchasUSBports.Inadditiontothereducedchargetime,higherefficienciesreducethepowerlossesthroughthechargerandallowsforbetterthermalmanagementoftheendproduct. Thebq24140integratesadualinput3MHzsynchronousswitchingchargerthattargetsspacelimitedportableapplicationspoweredbyasinglecellLibasedbatterypack.Inadditiontochargethebattery,thebq24140providessupportforsimultaneouslyboostingthebatteryvoltagebacktotheUSBinputforUSB-OTGsupport. Thebq24140hastwooperationmodes:defaultmodeandhost-controlmode.Indefaultmode,thechargerwillstartachargecyclewiththedefaultparametersandwaitforanI2CwritetotheICbeforeenteringhost-mode.Inhost-controlmode,thechargerwillswitchtoa32swatchdogtimerandthechargeparamterswillfollowtheinformationsetontheregisters. Thebq24140providesthreewaysofconfiguringthecharger,chargemode,boostmodeandhighimpedancemode.These3configurationallowsformultiplepossiblesettingsofthechargesystems,includingchargingthebatteryandprovidingpowertoanessory.Thehighimpedancemodereducesthequiescentcurrentfromthedevice,effectivelyreducingthepowerconsumptionwhentheportabledeviceisinstandbymode.Integratedcontrolloopsensuresmoothtransitionsbetweenthedifferentoperatingmodes. PWMBuckCharger TheICprovidesanintegrated,fixed3MHzfrequencyvoltage-modecontrollertoregulatechargecurrentorvoltage.Thistypeofcontrollerisusedtoimprovelinetransientresponse,thereby,simplifyingworkusedforbothcontinuousanddiscontinuouscurrentconductionoperation.Thevoltageandcurrentloopsarepensatedusingapensationschemethatprovidesenoughphasemarginforstableoperation,allowingtheuseofsmallceramiccapacitorswithverylowESR.Thedeviceoperatesbetween0%to99.5%dutycycles. TheIChasbacktomon-drainN-channelFETsatthehighsideandoneN-channelFETatlowsideforbothVINandVBUSinputs.TheinputN-FETs(Q1,Q4)preventsbatterydischargewhenVINand/orVBUSislowerthanVBAT.Thesecondhigh-sideN-FET(Q2,Q5)aretheswitchingFETs.AchargepumpcircuitisusedtoprovidegatedriveforQ1andQ4,whileabootstrapcircuitwithanexternalbootstrapcapacitorisusedtosupplythegatedrivevoltageforQ2andQ5. 16 Copyright©2011,TexasInstrumentsIncorporated bq24140 ZHCS396–OCTOBER2011 Cycle-by-cyclecurrentlimitissensedthroughFETsQ4andQ5forthehighsidecurrentlimitandthroughQ3andQ6forthelowsidecurrentlimit.Thehighsidecurrentlimitthresholdissettoanominal2.4-Apeakcurrent.Thelow-sidecurrentlimitdecidesifthePWMControllerwilloperateinsynchronousornon-synchronousmode.Thisthresholdissetto100mAanditturnsoffthelow-sideN-channelFETs(Q3and/orQ6)beforethecurrentreverses,preventingthebatteryfromdischarging.Synchronousoperationisusedwhenthecurrentofthelow-sideFETisgreaterthan100mAtominimizepowerlosses. IfthebatteryvoltageisbelowtheV(SHORT)threshold,thebq24140appliestheshortcircuitcurrent,I(SHORT),tothebattery.Thepurposeofthiscurrentistocloseanopenprotectoronthebatterypack.OncethebatteryvoltagerisesaboveVSHORT,thebq24140rampsusthechargecurrenttotheprogrammedICHARGEvalue.IftheprogrammedchargecurrentrequiresaninputcurrentthatishigherthantheprogrammedIIN_LIMITvalue,thenthebq24140willregulatetheinputcurrentandthechargecurrentwillbelimitedbytheinputcurrentloop.Theslewrateforfastchargecurrentiscontrolledtominimizethecurrentandvoltageover-shootduringtransient.Boththeinputcurrentlimit,IIN_LIMIT,andfastchargecurrent,ICHARGE,canbesetbythehost.Oncethebatteryvoltagereachestheprogrammedregulationvoltage,VOREG,thechargecurrentistapereddown.(SeeFigure16andFigure17. PrechargePhaseVOREG(LinearCharge) FastchargePhase(PWMCharge) VoltageRegulationPhase(PWMCharge) ICHARGE ChargeVoltage VSHORT TerminationISHORT ChargeCurrent Figure16.TypicalChargingProfileforNoInputCurrentLimit Copyright©2011,TexasInstrumentsIncorporated 17 bq24140 ZHCS396–OCTOBER2011 PrechargePhaseVOREG(LinearCharge) FastchargePhase(PWMCharge) VoltageRegulationPhase(PWMCharge) VSHORT TerminationISHORT ChargeVoltageChargeCurrent Figure17.TypicalChargingProfileWithInputCurrentLimit Thevoltageregulationfeedbackursbymonitoringthebattery-packvoltagebetweentheVBATandGNDpins.Theregulationvoltageisadjustable(3.5Vto4.44V)andisprogrammedthroughI2Cinterface.TheICmonitorsthechargingcurrentduringthevoltageregulationphase.Whentheterminationisenabled,oncetheterminationthreshold,ITERM,isdetectedandthebatteryvoltageisabovetherechargethreshold,theICterminatescharge.Theterminationcurrentlevelisprogrammable.Todisablethechargecurrenttermination,thehostcansetthechargeterminationbit(TE)ofchargecontrolregisterto0,refertoI2Csectionfordetail. Anewchargecycleisinitiatedwhenoneofthefollowingconditionsisdetected:•ThebatteryvoltagefallsbelowtheV(OREG)–V(RCH)threshold.•VBUSorVINPower-onreset(POR),ifbatteryvoltageisbelowtheV(LOWV)threshold.•CEbittoggleorRESETbitisset(Hostcontrolled) Figure18showsanoperationalflowchartofthebq24140inchargemode. 18 Copyright©2011,TexasInstrumentsIncorporated ICunpowered AttachVINand/orVBUS DEFAULTmode bq24140 ZHCS396–OCTOBER2011 DEFAULTmodeChargeat ICHRG=325mAuptoVBAT=3.54V CDPinLow?
No Yes GoodinputNopower?
Yes Battery No Inserted?
Hi-ZmodeHi-ZmodeHi-Zmode Yes Yes BatteryneedNo charge?
ChargeDisable Attachbattery munication ?
No No15-mintimerexpired?
Yes HOSTmodecontrolled chargingatICHRGuptoVOREG Watchdogtimerexpired?
Hi-Zmode Yes No InputPower POR?
No VBAT>VRCHG,TermEnabledandITERM reached?
Yes Hi-Zmode Figure18.OperationalFlowchart POWERUP Whenapowersourceisfirstconnectedtothebq24140,theICwillgotodefaultmodefor15minutes.Indefaultmode,thebq24140isconfiguredwithsafechargingparametersforchargecurrent,chargevoltageandinputcurrent.Onceawriteeventisdonetothebq24140throughI2C,thedeviceentershostmodeandthedevicewillthenfollowtheparametersastheyarewrittenbythehost. Copyright©2011,TexasInstrumentsIncorporated 19 bq24140 ZHCS396–OCTOBER2011 Duringinitialpowerupindefaultmode,thedevicewilllookatthebatteryvoltage.IfthebatteryvoltageislessthantheVLOWV,thedevicewillchargethebatterywithadefaultchargecurrentof325mAandadefaultbatterychargevoltageof3.54V.Theinputcurrentlimitvaluedependsonwhichpowersourcewasused.Inthecasethebq24140ispoweredupfromtheVINsource,theinputcurrentlimitissetto500mA.IfthedeviceispoweredupfromtheVBUSsource,theinputcurrentlimitdependsonthestatusoftheOTGpin.IftheOTGpinislow,theinputcurrentlimitissetto100mA.IftheOTGpinishigh,theinputcurrentlimitissetto500mA. INPUTPOWERSOURCEPRIORITY Whentwopowersuppliesaredetectedindefaultmode,thebq24140willdefaulttoVINoperationandtheVBUSinputwillgotohighimpedance.Thereisablankingtimebetweenswitchingfromonepowersourcetotheotherpowersourceof10ms(tHANDOFF).Thestatediagrambelowdescribestheoperation(Figure19). InputPowerSourceSwitchOverStateDiagram VBUSChargingActive NoVIN>VUVLO?
Yes BadAdaptorDetectionforVIN No VINAdaptorGood?
Yes Set/CEbit(B2,Register1,0x6b)high DelayTHANDOFF10ms StartVINCharging Figure19.InputpowersourceselectionindefaultmodeInthecasewherethebq24140isinhostmode,powerprioritywillbedictatedbytheHostbysettingoneinputtohighimpedanceandactivatingtheotherinputusingtheHZ_MODEbitofthecontrolregister. 20 Copyright©2011,TexasInstrumentsIncorporated bq24140 ZHCS396–OCTOBER2011 BADADAPTORDETECTION AtPORofVBUSorVIN,theICperformsthebadadaptordetectionbyapplyingacurrentsinkof30mAtothevalidpowerpin.IfthepowerpinishigherthanVIN(MIN)for30ms,theadaptorisgoodandthechargeprocessbegins.Otherwise,ifthepowerpindropsbelowVIN(MIN),abadadaptorisdetected.Onceabadadaptorisdetected,theICdisablesthecurrentsink,sendsasendfaultpulseinFAULTpinandsetsthebadadaptorflag(B2-B0=011forRegister0x00).AfteradelayofTINT,theICrepeatstheadaptordetectionprocess,asshownintheflowchartbelow: VINorVBUSPOR Delay1ms EnableAdaptorDetection Start30mstimer No Enable30mAcurrentsource VINorVBUS > Yes VINMIN?
30msTimerexpired?
No BadAdaptorDetectedPulseSTATpin SetBadAdaptorFlag GoodAdaptorDetectedDisableAdaptorDetection StartChargeEnableVINDPM DelayTINT2s Figure20.BadAdaptorDetection BATTERYDETECTION Batterydetectionduringcharging Duringnormalchargingprocesswithhostcontrol,oncethevoltageattheVBATpinisabovethebatteryrechargethreshold,VOREG–VRCH,andtheterminationchargecurrentisdetected,theICturnsoffthePWMchargeandenablesadischargecurrent,IDETECT,foraperiodoftDETECT,thenchecksthebatteryvoltage.Ifthebatteryvoltageisstillaboverechargethreshold,theICconcludesthatthebatteryispresentandchargepleted.Ontheotherhand,ifthebatteryvoltageisbelowbatteryrechargethreshold,theICconcludesthatthebatterywasremoved.Underthiscondition,thechargeparameters(suchasinputcurrentlimit)areresettothedefaultvaluesandchargeresumesafteradelayoftINT.Thisfunctionensuresthatthechargeparametersareresetwheneverthebatteryisreplaced. Copyright©2011,TexasInstrumentsIncorporated 21 bq24140 ZHCS396–OCTOBER2011 Batterydetectionduringpower-up Thebq24140alsohasauniquebatterydetectionschemeduringthestartupofthecharger.Atpowerup,ifthetimerisin15-minutemode,bq24140willstarta262mstimerwhenexitingfromshortcircuitmodetoPWMchargemode.Ifthebatteryvoltageischargedtorechargethreshold(VOREG–VRCH)andthe262mstimerhasnotexpiredyet,orbatteryvoltageisaboveoutputOVPthresholdduringshort-circuitmode,bq24140willconsiderthebatteryisnotpresent;thenchargingandgotohighimpedancemodeimmediately.However,ifthe262mstimerhasexpiredbeforetherechargethresholdisreached,thechargingprocesswillcontinueasnormal. HIGH-SIDELEDDRIVER TheLEDpinisahigh-sideLEDdriver.ThisLEDfunctionneedstorunfromthebatteryandtheexpectedoutputcurrentcanbeprogrammedthroughI2C.Thereare2bitsforprogrammingtheoutputcurrentfromtheLEDpin.Inaddition,thereisextraprogrammabilityfortheLEDfunction.SincethereisonlyoneLEDdriverusedbyboththeVINandVBUSchargercores,thereisonlyoneLEDregisterthatcanbeessedthroughtheaddresses6AHand6BH.Whenoneofthetwoaddressesiswritten,thesettingsforbothcoreswillbeset.RefertotheRegisterDescriptionSectionfordetailsontheLEDprogrammabletimingsandcurrentoptions. BOOSTCONVERTEROPERATION Thebq24140supportUSB-OTGfortheVBUSpinwhenOTGmodeisenabled.Inthisconfiguration,thebatteryvoltageisboostedto5.05V(±3%).Themaximumoutputcurrentfortheboostconvertedisincreasedto650mAminimumcurrent. BoostStartUpTopreventtheinductorsaturationandlimittheinrushcurrent,asoft-startcontrolisappliedduringthebooststartup. PFMModeatLightLoadInboostmode,theICoperatesinpulseskippingmode(PFMmode)toreducethepowerlossandimprovetheconverterefficiencyatlightloadcondition.Duringboosting,thePWMconverteristurnedoffiftheinductorcurrentfallsbelowthan200mA.ThePWMisturnedbackononlywhenthevoltageatPMIDpindropsto99.5%ofthetypicalratedoutputvoltage.Auniquepre-setcircuitisusedtomakethesmoothtransitionbetweenPWMandPFMmode. SafetyTimerinBoostModeAtthebeginningofboostoperation,theICstartsa32-secondtimerthatisresetbythehostusingtheI2Cinterface.Writing“1”toresetbitofTMR_RSTincontrolregisterwillresetthe32-secondtimerandTMR_RSTisautomaticallysetto“0”afterthe32-secondtimerisreset.Oncethe32-secondtimerexpires,theICturnsofftheboostconverter,enunciatesthefaultpulsefromtheSTATpinandsetsfaultstatusbitsinthestatusregister.ThefaultconditionisclearedbyPORorhostcontrol. ChargeStatusOutput,STATPin TheSTATpinisusedtoindicateoperationconditionsforbq24140.STATispulledlowduringchargingwhenEN_STATbitincontrolregister(00H)issetto“1”.Underotherconditions,STATpinbehavesasahighimpedance(open-drain)output.Underfaultconditions,a128-μspulsewillbesentouttonotifythehost.ThestatusofSTATpinatdifferentoperationconditionsissummarizedinTable1.TheSTATpincanbeusedtodriveanLEDmunicatetothehostprocessor. Table1.STATPinSummary CHARGESTATEChargeinprogressandEN_STAT=
1 OthernormalconditionsChargemodefaultsandinputnotinHiZBoostmodefaultsandinputnotinHiZVINPresentbitchange(H→LorL→H)regardlessofHiZstatusVBUSPresentbitchange(H→LorL→H)regardlessofHiZstatus STATLowOpen-Drain128µspulse,thenopen-drain128µspulse,thenopen-drain128µspulse,thennormalperabovecases128µspulse,thennormalperabovecases 22 Copyright©2011,TexasInstrumentsIncorporated bq24140 ZHCS396–OCTOBER2011 SafetyLimitRegisters Thebq24140includessafetylimitregisterswhichareusedasanextralevelofsecurityfordevicesthatallowapplicationstobedevelopedbythirdpartyvendors(i.e.AndroidOS).Thepurposeofthesafetylimitregistersistoprogramthemaximumallowablebatteryregulationvoltageandchargecurrent.Thesetworegistersneedtobewrittenbeforeanyotherwriteactionsaresenttothebq24140.Onceawriteactiontoaregisterotherthanthesafetylimitregisters,thevaluesonthesafetylimitregisterswillbelocked. SLRSTPin WhenSLRST=0,thebq24140willresetallthesafetylimitstodefaultvalues,regardlessofthewriteactionstosafetylimitsregisters(06H).WhenSLRST=1,thebq24140canprogramthesafetylimitregisteruntilanywriteactiontootherregisterslockstheprogrammedsafetylimits. VREGLDO Thebq24140includesa2.6VLDOthatcanbeusedasanindicationoftheVINinputbeingconnected.ThisLDOisactiveallthetimewhenthereisapowersourceconnectedtotheVINinput.ThecurrentlimitontheLDOguaranteesupto10mA. SERIALINTERFACEDESCRIPTION I2Cisa2-wireserialinterfacedevelopedbyPhilipsSemiconductor(seeI2C-BusSpecification,Version2.1,January2000).Thebusconsistsofadataline(SDA)andaclockline(SCL)withpull-upstructures.Whenthebusisidle,bothSDAandSCLlinesarepulledhigh.AllthepatibledevicesconnecttotheI2CbusthroughopendrainI/Opins,SDAandSCL.Amasterdevice,usuallyamicrocontrolleroradigitalsignalprocessor,controlsthebus.ThemasterisresponsibleforgeneratingtheSCLsignalanddeviceaddresses.ThemasteralsogeneratesspecificconditionsthatindicatetheSTARTandSTOPofdatatransfer.Aslavedevicereceivesand/ortransmitsdataonthebusundercontrolofthemasterdevice. TheICworksasaslaveandpatiblewiththefollowingdatatransfermodes,asdefinedintheI2C-BusSpecification:standardmode(100kbps),fastmode(400kbps),andhigh-speedmode(upto3.4Mbpsinwritemode).Theinterfaceaddsflexibilitytothebatterychargesolution,enablingmostfunctionstobeprogrammedtonewvaluesdependingontheinstantaneousapplicationrequirements.Registercontentsremainintactaslongassupplyvoltageremainsabove2.2V(typical).I2Cisasynchronous,whichmeansthatitrunsoffofSCL.ThedevicehasnonoiseorglitchfilteringonSCL,soSCLinputneedstobeclean.Therefore,itismendedthatSDAchangeswhileSCLisLOW. Thedatatransferprotocolforstandardandfastmodesisexactlythesame,therefore,theyarereferredtoasF/S-modeinthisdocument.Theprotocolforhigh-speedmodeisdifferentfromtheF/S-mode,anditisreferredtoasHS-mode.TheICsupports7-bitaddressingonly.Thedevicehastwo7-bitaddresses,definedas‘1101011’(6BH)forUSBportionand,and‘1101010’(6AH)forACportion. Copyright©2011,TexasInstrumentsIncorporated 23 bq24140 ZHCS396–OCTOBER2011 REGISTERDESCRIPTION ForI2Caddress6BH(USBCharger) Status/ControlRegister(READ/WRITE)Memorylocation:00,Resetstate:x1xx0xxx BITB7(MSB) B6B5B4B3B2B1B0(LSB) NAMETMR_RST/OTG EN_STATSTAT2STAT1BOOSTFAULT_3FAULT_2FAULT_
1 Read/WriteRead/Write Read/WriteReadonlyReadonlyReadonlyReadonlyReadonlyReadonly FUNCTIONWrite:TMR_RSTfunction,write“1”toresetthesafetytimer(autoclear)Read:OTGpinstatus,0-OTGpinatLowlevel,1-OTGpinatHighlevel;0-DisableSTATpinfunction,1-EnableSTATpinfunction(default1)00-Ready,01-Chargeinprogress,10-Chargedone,11-Fault Boostmode,0—Notinboostmode.Chargemode:000-Normal,001-VBUSOVP,010-Sleepmode,011-BadAdaptororVBUS(1)VLOWV_1
(1)TECEHZ_MODEOPA_MODE Read/WriteRead/WriteRead/WriteRead/WriteRead/WriteRead/WriteRead/WriteRead/WriteRead/Write FUNCTION00-USBhostwith100-mAcurrentlimit,01-USBhostwith500-mAcurrentlimit,10-USBhost/chargerwith800-mAcurrentlimit,11-Noinputcurrentlimit(default00) 200mVweakbatteryvoltagethreshold(default1)100mVweakbatteryvoltagethreshold(default1)1-Enablechargecurrenttermination,0-Disablechargecurrenttermination(default0)1-Chargerisdisabled,0-Chargerenabled(default0)1-Highimpedancemode,0-Nothighimpedancemode(default0)1-Boostmode,0-Chargermode(default0)
(1)Therangeofweakbatteryvoltagethreshold(VLOWV)is3.4V–3.7Vwiththeoffsetof3.4Vandstepof100mV(default3.7V). Control/BatteryVoltageRegister(READ/WRITE)Memorylocation:02,Resetstate:00001010 BIT NAME Read/WriteFUNCTION B7(MSB)VOREG5 Read/Write BatteryRegulationVoltage:640mV(default0) B6 VOREG4 Read/Write BatteryRegulationVoltage:320mV(default0) B5 VOREG3 Read/Write BatteryRegulationVoltage:160mV(default0) B4 VOREG2 Read/Write BatteryRegulationVoltage:80mV(default0) B3 VOREG1 Read/Write BatteryRegulationVoltage:40mV(default1) B2 VOREG0 Read/Write BatteryRegulationVoltage:20mV(default0) B1 OTG_PL Read/Write ActiveatHighlevel,0-ActiveatLowlevel(default1) B0(LSB)OTG_EN Read/Write EnableOTGPin,0-DisableOTGpin(default0) •Chargevoltagerangeis3.5V–4.44Vwiththeoffsetof3.5Vandstepof20mV(default3.54V). 24 Copyright©2011,TexasInstrumentsIncorporated bq24140 ZHCS396–OCTOBER2011 Vender/Part/RevisionRegister(READonly)Memorylocation:03,Resetstate:01010000 BITB7(MSB) B6B5B4B3B2B1B0(LSB) NAMEVender2Vender1Vender0PN1PN0Revision2Revision1Revision0 Read/WriteReadonlyReadonlyReadonlyReadonlyReadonlyReadonlyReadonlyReadonly FUNCTIONVenderCode:bit2(default0)VenderCode:bit1(default1)VenderCode:bit0(default0)10 000:Revision1.0 BatteryTermination/FastChargeCurrentRegister(READ/WRITE)Memorylocation:04,Resetstate:00000001 BIT NAME Read/Write FUNCTION B7(MSB)Reset Writeonly Write:1-Chargerinresetmode,0-NoeffectRead:alwaysget“0” B6 VICHRG3 Read/Write Chargecurrentsensevoltage:27.2mV B5 VICHRG2 Read/Write Chargecurrentsensevoltage:13.6mV B4 VICHRG1 Read/Write Chargecurrentsensevoltage:6.8mV B3 VICHRG0 Read/Write Chargecurrentsensevoltage:NA B2 VITERM2 Read/Write Terminationcurrentsensevoltage:13.6mV(default0) B1 VITERM1 Read/Write Terminationcurrentsensevoltage:6.8mV(default0) B0(LSB)VITERM0 Read/Write Terminationcurrentsensevoltage:3.4mV(default1) •Chargecurrentsensevoltageoffsetis37.4mVanddefaultchargecurrentis550mA,if68-mΩsensingresistorisusedandLOW_CHG=
0. •Themaximumchargecurrentis1.25A(Rsns=68mΩ)whenchargingfromVBUS.Ifahighervalueisprogrammed,the1.25Aormaximumsafetylimitchargecurrentisselected SpecialChargerVoltage/EnablePinStatusRegisterMemorylocation:05,Resetstate:001XX100 BIT NAME Read/WriteFUNCTION B7(MSB)NA Read/WriteNA B6 VBUS_PRESENTReadOnly 0—VBUSnotconnected,1—VBUSpresent B5 LOW_CHG Read/Write 0—Normalchargecurrentsensevoltageat04H,1—Lowchargecurrentsensevoltageof22.1mV(default1) B4 DPM_STATUS ReadOnly 0—DPMmodeisnotactive,1—DPMmodeisactive B3 VIN_PRESENTReadOnly 0—VINnotconnected,1—Vinpresent B2 VSREG2 Read/WriteSpecialchargervoltage:320mV(default1) B1 VSREG1 Read/WriteSpecialchargervoltage:160mV(default0) B0(LSB)VSREG0 Read/WriteSpecialchargervoltage:80mV(default0) •Specialchargervoltageoffsetis4.2Vanddefaultspecialchargervoltageis4.52V. •Defaultchargecurrentwillbe325mA,if68-mΩsensingresistorisused,sincedefaultLOW_CHG=
1. Copyright©2011,TexasInstrumentsIncorporated 25 bq24140 ZHCS396–OCTOBER2011 SafetyLimitRegister(READ/WRITE,Writeonlyonceafterreset!
)Memorylocation:06,Resetstate:01000000 BIT NAME Read/Write FUNCTION B7(MSB)VMCHRG3 Read/Write Maximumchargecurrentsensevoltage:54.4mV(default0) B6 VMCHRG2 Read/Write Maximumchargecurrentsensevoltage:27.2mV(default1) B5 VMCHRG1 Read/Write Maximumchargecurrentsensevoltage:13.6mV(default0) B4 VMCHRG0 Read/Write Maximumchargecurrentsensevoltage:6.8mV(default0) B3 VMREG3 Read/Write Maximumbatteryregulationvoltage:160mV(default0) B2 VMREG2 Read/Write Maximumbatteryregulationvoltage:80mV(default0) B1 VMREG1 Read/Write Maximumbatteryregulationvoltage:40mV(default0) B0(LSB)VMREG0 Read/Write Maximumbatteryregulationvoltage:20mV(default0) •Maximumchargecurrentsensevoltageoffsetis550mA(defaultat950mA)andthemaximumchargecurrentoptionis1.55A,if68-mΩsensingresistorisused. •Maximumbatteryregulationvoltageoffsetis4.2V(defaultat4.2V)andmaximumbatteryregulationvoltageoptionis4.44V. BITB7(MSB) B6 NAMEILED1ILED0 B5 NA B4 LED_CTRL B3 t_LEDON1 B2 t_LEDON0 B1 t_LEDOFF1 B0(LSB)t_LEDOFF0 LEDConfigurationRegisterMemorylocation:07,Resetstate:10000010 Read/WriteRead/WriteRead/Write ReadOnlyRead/WriteRead/WriteRead/Write Read/Write Read/Write FUNCTION 00–LEDOff01–LEDcurrent1.25mA10–LEDcurrent2.5mA(default)11–LEDcurrent5mA Returns0 0–LEDOnwhenchargingisActive(default)1–LEDOnregardlessofchargingstatus 00–LEDOntime130ms(default)01–LEDOntime260ms10–LEDOntime520ms11–LEDConstantOn 00–LEDOfftime390ms01–LEDOfftime780ms10–LEDOfftime1560ms(default)11–LEDOfftime3120ms 26 Copyright©2011,TexasInstrumentsIncorporated bq24140 ForI2Caddress6AH(ACCharger) ZHCS396–OCTOBER2011 Status/ControlRegister(READ/WRITE)Memorylocation:00,Resetstate:x1xx0xxx BITB7(MSB) B6B5B4B3B2B1B0(LSB) NAME Read/Write TMR_RST/OTGRead/Write EN_STATSTAT2STAT1NAFAULT_3FAULT_2FAULT_
1 Read/WriteReadonlyReadonlyReadonlyReadonlyReadonlyReadonly FUNCTIONWrite:TMR_RSTfunction,write“1”toresetthesafetytimer(autoclear)Read:SLRSTpinstatus,0-SLRSTpinatLOWlevel,1-SLRSTpinatHIGHlevel.0-DisableSTATpinfunction,1-EnableSTATpinfunction(default1)00-Ready,01-Chargeinprogress,10-Chargedone,11-Fault NAChargemode:000-Normal,001-VBUSOVP,010-Sleepmode,011-BadAdaptororVBUS2 Iin_Limit_1VLOWV_2
(1)VLOWV_1
(1)TE/CEHZ_MODENA Read/WriteRead/Write Read/WriteRead/WriteRead/WriteRead/WriteRead/WriteRead/WriteRead/Write FUNCTION00-USBhostwith100-mAcurrentlimit,01-USBhostwith500-mAcurrentlimit,10-USBhost/chargerwith800-mAcurrentlimit,11-Noinputcurrentlimit(default01) 200mVweakbatteryvoltagethreshold(default1)100mVweakbatteryvoltagethreshold(default1)1-Enablechargecurrenttermination,0-Disablechargecurrenttermination(default0)1-Chargerisdisabled,0-Chargerenabled(default0)1-Highimpedancemode,0-Nothighimpedancemode(default0)NA
(1)Therangeofweakbatteryvoltagethreshold(VLOWV)is3.4V–3.7Vwiththeoffsetof3.4Vandstepof100mV(default3.7V). Control/BatteryVoltageRegister(READ/WRITE)Memorylocation:02,Resetstate:00001010 BIT NAME Read/Write FUNCTION B7(MSB)VOREG5 Read/Write BatteryRegulationVoltage:640mV(default0) B6 VOREG4 Read/Write BatteryRegulationVoltage:320mV(default0) B5 VOREG3 Read/Write BatteryRegulationVoltage:160mV(default0) B4 VOREG2 Read/Write BatteryRegulationVoltage:80mV(default0) B3 VOREG1 Read/Write BatteryRegulationVoltage:40mV(default1) B2 VOREG0 Read/Write BatteryRegulationVoltage:20mV(default0) B1 NA Read/Write NA B0(LSB)NA Read/Write NA •Chargevoltagerangeis3.5V–4.44Vwiththeoffsetof3.5Vandstepof20mV(default3.54V). Copyright©2011,TexasInstrumentsIncorporated 27 bq24140 ZHCS396–OCTOBER2011 Vender/Part/RevisionRegister(READonly)Memorylocation:03,Resetstate:01000000 BITB7(MSB) B6B5B4B3B2B1B0(LSB) NAMEVender2Vender1Vender0PN1PN0Revision2Revision1Revision0 Read/WriteReadonlyReadonlyReadonlyReadonlyReadonlyReadonlyReadonlyReadonly FUNCTIONVenderCode:bit2(default0)VenderCode:bit1(default1)VenderCode:bit0(default0)00 000:Revision1.0 BatteryTermination/FastChargeCurrentRegister(READ/WRITE)Memoryl