NRVB0540T1G,MBR0540T3G,NRVB0540T3G
SchottkyPowerRectifier,
SurfaceMount,
0.5A,40V,SOD-123Package
TheSchottkyPowerRectifieremploystheSchottkyBarrierprinciplewithabarriermetalthatproducesoptimalforwardvoltagedrop−reversecurrenttradeoff.Ideallysuitedforlowvoltage,highfrequencyrectification,orasafreewheelingandpolarityprotectiondiodesinsurfacemountapplicationspactsizeandweightarecriticaltothesystem.Thispackageprovidesanalternativetotheleadless34MELFstylepackage.
Features
GuardringforStressProtectionVeryLowForwardVoltageEpoxyMeetsUL94V−0@0.125inPackageDesignedforOptimalAutomatedBoardAssemblyAEC−Q101QualifiedandPPAPCapableNRVBPrefixforAutomotiveandOtherApplicationsRequiring
UniqueSiteandControlChangeRequirements
AllPackagesarePb−Free*
MechanicalCharacteristics
DeviceMarking:B4PolarityDesignator:CathodeBandWeight:11.7mg(approximately)Case:EpoxyMoldedFinish:AllExternalSurfacesCorrosionResistantandTerminal
LeadsareReadilySolderable
LeadandMountingSurfaceTemperatureforSolderingPurposes:
260Cmax.for10Seconds
ESDRating:
HumanBodyModel=3BMachineModel=
C SCHOTTKYBARRIERRECTIFIER 0.5AMPERES,40VOLTS SOD−123CASE425STYLE1 MARKINGDIAGRAM
1 B4MG
G B4=DeviceCodeM=DateCodeG=Pb−FreePackage (Note:Microdotmaybeineitherlocation) ORDERINGINFORMATION DevicePackage Shipping† MBR0540T1GSOD−1233,000/Tape&Reel(Pb−Free)(8mmTape,7”Real) NRVB0540T1GSOD−1233,000/Tape&Reel(Pb−Free)(8mmTape,7”Real) MBR0540T3GSOD−12310,000/Tape&Reel(Pb−Free)(8mmTape,13”Real) NRVB0540T3GSOD−12310,000/Tape&Reel(Pb−Free)(8mmTape,13”Real) †Forinformationontapeandreelspecifications,includingpartorientationandtapesizes,pleaserefertoourTapeandReelPackagingSpecificationsBrochure,BRD8011/D. *ForadditionalinformationonourPb−Freestrategyandsolderingdetails,pleasedownloadtheONSemiconductorSolderingandMountingTechniquesReferenceManual,SOLDERRM/D. SemiconductorComponentsIndustries,LLC,2012
1 January,2012−Rev.7 PublicationOrderNumber:MBR0540T1/D MBR0540T1G,NRVB0540T1G,MBR0540T3G,NRVB0540T3G MAXIMUMRATINGS Rating Symbol Value Unit PeakRepetitiveReverseVoltageWorkingPeakReverseVoltageDCBlockingVoltage VRRM 40
V VRWM VR AverageRectifiedForwardCurrent(AtRatedVR,TC=115C) IO
A 0.5 PeakRepetitiveForwardCurrent(AtRatedVR,SquareWave,20kHz,TC=115C) IFRM
A 1.0 Non−RepetitivePeakSurgeCurrent(SurgeAppliedatRatedLoadConditionsHalfwave,SinglePhase,60Hz) IFSM
A 5.5 Storage/OperatingCaseTemperatureRangeOperatingJunctionTemperature Tstg,TC −55to+150
C TJ −55to+150
C VoltageRateofChange(RatedVR,TJ=25C) dv/dt V/ms 1000 StressesexceedingMaximumRatingsmaydamagethedevice.MaximumRatingsarestressratingsonly.FunctionaloperationabovethemendedOperatingConditionsisnotimplied.ExtendedexposuretostressesabovethemendedOperatingConditionsmayaffectdevicereliability. THERMALCHARACTERISTICS Characteristic ThermalResistance−Junction−to−Lead(Note1)ThermalResistance−Junction−to−Ambient(Note2)
1.Mountedwithminimummendedpadsize,PCBoardFR4.2.1inchsquarepadsize(1X0.5inchforeachlead)onFR4board. SymbolRtjlRtja Value 118206 UnitC/W ELECTRICALCHARACTERISTICSCharacteristic MaximumInstantaneousForwardVoltage(Note3)(iF=0.5A)(iF=1A) MaximumInstantaneousReverseCurrent(Note3)(VR=40V)(VR=20V)
3.PulseTest:PulseWidth250ms,DutyCycle2.0%. Symbol Value Unit vF TJ=25
C TJ=100
C V 0.51 0.46 0.62 0.61 IR TJ=25
C TJ=100
C mA 20 13,000 10 5,000 100 10 10 iF,INSTANTANEOUSFORWARDCURRENT(AMPS)IF,INSTANTANEOUSFORWARDCURRENT(AMPS) 25
C 1.0 TJ=125
C TJ=-40
C TJ=25
C TJ=100
C 0.1 0.2 0.4 0.6 0.8 1.0 1.2 vF,INSTANTANEOUSFORWARDVOLTAGE(VOLTS) Figure1.TypicalForwardVoltage 1.0 TJ=125
C TJ=100
C TJ=25
C 0.1 0.2 0.4 0.6 0.8 1.0 1.2 VF,MAXIMUMINSTANTANEOUSFORWARDVOLTAGE(VOLTS) Figure2.MaximumForwardVoltage
2 MBR0540T1G,NRVB0540T1G,MBR0540T3G,NRVB0540T3G IR,REVERSECURRENT(AMPS) IO,AVERAGEFORWARDCURRENT(AMPS) 100E-
3 100E-
3 IR,MAXIMUMREVERSECURRENT(AMPS) 10E-31.0E-
3 TJ=125
C 10E-31.0E-
3 TJ=100
C 100E-6 10E-6 1.0E-6 100E-90 TJ=100
C TJ=25
C 10 20 30 VR,REVERSEVOLTAGE(VOLTS) Figure3.TypicalReverseCurrent 100E-
6 10E-
6 1.0E-
6 100E-
9 40
0 TJ=25
C 10 20 30 40 VR,REVERSEVOLTAGE(VOLTS) Figure4.MaximumReverseCurrent PFO,AVERAGEPOWERDISSIPATION(WATTS) 0.8dc 0.7 0.6 SQUAREWAVE 0.5Ipk/Io=p 0.4Ipk/Io=5 0.3Ipk/Io=10 0.2Ipk/Io=20 0.1 FREQ=20kHz 0.45 0.40 SQUAREWAVE dc 0.35Ipk/Io=p 0.30 0.25 Ipk/Io=
5 0.20 Ipk/Io=10 0.15 Ipk/Io=20 0.10 0.05
0 0 20 40 60 80 100120140 000.10.20.30.40.50.60.70.8 TL,LEADTEMPERATURE(C)Figure5.CurrentDerating IO,AVERAGEFORWARDCURRENT(AMPS)Figure6.ForwardPowerDissipation TJ,DERATEDOPERATINGTEMPERATURE(C) 100 126 TJ=25
C 124 122 Rtja=118C/W 120 1005.010152025303540 VR,REVERSEVOLTAGE(VOLTS)Figure7.Capacitance 118149C/W 116180C/W 114206C/W 112228C/W 11005.010152025303540 VR,DCREVERSEVOLTAGE(VOLTS) Figure8.TypicalOperatingTemperatureDerating* *Reversepowerdissipationandthepossibilityofthermalrunawaymustbeconsideredwhenoperatingthisdeviceunderany reversevoltageconditions.CalculationsofTJthereforemustincludeforwardandreversepowereffects.Theallowableoperating TJmaybecalculatedfromtheequation: TJ=TJmax−r(t)(Pf+Pr)where r(t)=thermalimpedanceundergivenconditions, Pf=forwardpowerdissipation,and Pr=reversepowerdissipation ThisgraphdisplaysthederatedallowableTJduetoreversebiasunderDCconditionsonlyandiscalculatedas TJ=TJmax−r(t)Pr,wherer(t)=Rthja.Forotherpowerapplicationsfurthercalculationsmustbeperformed.
C,CAPACITANCE(pF)
3 R(T),TRANSIENTTHERMALRESISTANCE(NORMALIZED) MBR0540T1G,NRVB0540T1G,MBR0540T3G,NRVB0540T3G 1E+0050%20%10% 1E-015.0%2.0%1.0% 1E-02 1E-030.00001 1E+00 50%20%1E-0110%5.0%2.0%1E-021.0% 1E-030.00001 Rtjl(t)=Rtjl*r(t) 0.0001 0.001 0.01 0.1 1.0 10
T,TIME(s) Figure9.ThermalResponseJunctiontoLead 0.0001 Rtjl(t)=Rtjl*r(t) 0.001 0.01 0.1 1.0 10
T,TIME(s) Figure10.ThermalResponseJunctiontoAmbient 100 1,000 100 1,000 R(T),TRANSIENTTHERMALRESISTANCE(NORMALIZED)
4 MECHANICALCASEOUTLINE PACKAGEDIMENSIONS SCALE5:
1 SOD−123CASE425−04 ISSUEG DATE07OCT2009
D ÂÂÂÂÂÂ1ÂÂÂÂÂÂ HE
E AA1
2 q b
L C SOLDERINGFOOTPRINT* 0.91 0.036 ÉÉÉÉÉÉÉÉÉÉÉÉÉÉÉÉÉÉ2.36 1.220.048 0.093 4.19 0.165 ǒǓSCALE10:
1 mminches *ForadditionalinformationonourPb−Freestrategyandsolderingdetails,pleasedownloadtheONSemiconductorSolderingandMountingTechniquesReferenceManual,SOLDERRM/D. NOTES:
1.DIMENSIONINGANDTOLERANCINGPERANSIY14.5M,1982.2.CONTROLLINGDIMENSION:INCH. MILLIMETERS INCHES DIMMINNOMMAXMINNOMMAX A0.941.171.350.0370.0460.053 A10.000.050.100.0000.0020.004 b0.510.610.710.0200.0240.028 c ------0.15 ------0.006 D1.401.601.800.0550.0630.071 E2.542.692.840.1000.1060.112 HE3.563.683.860.1400.1450.152L0.25------0.010------ q 0°---10° 0°---10° GENERICMARKINGDIAGRAM*
1 XXXMG
G XXX=SpecificDeviceCodeM=DateCodeG=Pb−FreePackage(Note:Microdotmaybeineitherlocation) *Thisinformationisgeneric.Pleaserefertodevicedatasheetforactualpartmarking.Pb−Freeindicator,“G”ormicrodot“G”,mayormaynotbepresent. STYLE1:PIN1.CATHODE2.ANODE DOCUMENTNUMBER:DESCRIPTION: 98ASB42927BSOD−123 ElectronicversionsareuncontrolledexceptwhenesseddirectlyfromtheDocumentRepository.Printedversionsareuncontrolledexceptwhenstamped“CONTROLLEDCOPY”inred. PAGE1OF1 ONSemiconductorand aretrademarksofSemiconductorComponentsIndustries,LLCdbaONSemiconductororitssubsidiariesintheUnitedStatesand/orothercountries. ONSemiconductorreservestherighttomakechangeswithoutfurthernoticetoanyproductsherein.ONSemiconductormakesnowarranty,representationorguaranteeregarding thesuitabilityofitsproductsforanyparticularpurpose,nordoesONSemiconductorassumeanyliabilityarisingoutoftheapplicationoruseofanyproductorcircuit,andspecifically disclaimsanyandallliability,includingwithoutlimitationspecial,consequentialorincidentaldamages.ONSemiconductordoesnotconveyanylicenseunderitspatentrightsnorthe rightsofothers. ©SemiconductorComponentsIndustries,LLC,2019 onsemi, ,andothernames,marks,andbrandsareregisteredand/monlawtrademarksofSemiconductorComponentsIndustries,LLCdba“onsemi”oritsaffiliates and/orsubsidiariesintheUnitedStatesand/orothercountries.onsemiownstherightstoanumberofpatents,trademarks,copyrights,tradesecrets,andotherintellectualproperty. Alistingofonsemi’sproduct/patentcoveragemaybeessedat/site/pdf/Patent−Marking.pdf.onsemireservestherighttomakechangesatanytimetoany productsorinformationherein,withoutnotice.Theinformationhereinisprovided“as−is”andonsemimakesnowarranty,representationorguaranteeregardingtheuracyofthe information,productfeatures,availability,functionality,orsuitabilityofitsproductsforanyparticularpurpose,nordoesonsemiassumeanyliabilityarisingoutoftheapplicationoruse ofanyproductorcircuit,andspecificallydisclaimsanyandallliability,includingwithoutlimitationspecial,consequentialorincidentaldamages.Buyerisresponsibleforitsproducts andapplicationsusingonsemiproducts,pliancewithalllaws,regulationsandsafetyrequirementsorstandards,regardlessofanysupportorapplicationsinformation providedbyonsemi.“Typical”parameterswhichmaybeprovidedinonsemidatasheetsand/orspecificationscananddovaryindifferentapplicationsandactualperformancemay varyovertime.Alloperatingparameters,including“Typicals”mustbevalidatedforeachcustomerapplicationbycustomer’stechnicalexperts.onsemidoesnotconveyanylicense underanyofitsintellectualpropertyrightsnortherightsofothers.onsemiproductsarenotdesigned,intended,orauthorizedforuseasaponentinlifesupportsystems oranyFDAClass3medicaldevicesormedicaldeviceswithasameorsimilarclassificationinaforeignjurisdictionoranydevicesintendedforimplantationinthehumanbody.Should Buyerpurchaseoruseonsemiproductsforanysuchunintendedorunauthorizedapplication,Buyershallindemnifyandholdonsemianditsofficers,employees,subsidiaries,affiliates, anddistributorsharmlessagainstallclaims,costs,damages,andexpenses,andreasonableattorneyfeesarisingoutof,directlyorindirectly,anyclaimofpersonalinjuryordeath associatedwithsuchunintendedorunauthorizeduse,evenifsuchclaimallegesthatonsemiwasnegligentregardingthedesignormanufactureofthepart.onsemiisanEqual Opportunity/AffirmativeActionEmployer.Thisliteratureissubjecttoallapplicablecopyrightlawsandisnotforresaleinanymanner. PUBLICATIONORDERINGINFORMATION LITERATUREFULFILLMENT:EmailRequeststo:orderlit@ onsemiWebsite: TECHNICALSUPPORTNorthAmericanTechnicalSupport:VoiceMail:1800−282−9855TollFreeUSA/CanadaPhone:011421337902910 Europe,MiddleEastandAfricaTechnicalSupport:Phone:00421337902910Foradditionalinformation,pleasecontactyourlocalSalesRepresentative ◊
C SCHOTTKYBARRIERRECTIFIER 0.5AMPERES,40VOLTS SOD−123CASE425STYLE1 MARKINGDIAGRAM
1 B4MG
G B4=DeviceCodeM=DateCodeG=Pb−FreePackage (Note:Microdotmaybeineitherlocation) ORDERINGINFORMATION DevicePackage Shipping† MBR0540T1GSOD−1233,000/Tape&Reel(Pb−Free)(8mmTape,7”Real) NRVB0540T1GSOD−1233,000/Tape&Reel(Pb−Free)(8mmTape,7”Real) MBR0540T3GSOD−12310,000/Tape&Reel(Pb−Free)(8mmTape,13”Real) NRVB0540T3GSOD−12310,000/Tape&Reel(Pb−Free)(8mmTape,13”Real) †Forinformationontapeandreelspecifications,includingpartorientationandtapesizes,pleaserefertoourTapeandReelPackagingSpecificationsBrochure,BRD8011/D. *ForadditionalinformationonourPb−Freestrategyandsolderingdetails,pleasedownloadtheONSemiconductorSolderingandMountingTechniquesReferenceManual,SOLDERRM/D. SemiconductorComponentsIndustries,LLC,2012
1 January,2012−Rev.7 PublicationOrderNumber:MBR0540T1/D MBR0540T1G,NRVB0540T1G,MBR0540T3G,NRVB0540T3G MAXIMUMRATINGS Rating Symbol Value Unit PeakRepetitiveReverseVoltageWorkingPeakReverseVoltageDCBlockingVoltage VRRM 40
V VRWM VR AverageRectifiedForwardCurrent(AtRatedVR,TC=115C) IO
A 0.5 PeakRepetitiveForwardCurrent(AtRatedVR,SquareWave,20kHz,TC=115C) IFRM
A 1.0 Non−RepetitivePeakSurgeCurrent(SurgeAppliedatRatedLoadConditionsHalfwave,SinglePhase,60Hz) IFSM
A 5.5 Storage/OperatingCaseTemperatureRangeOperatingJunctionTemperature Tstg,TC −55to+150
C TJ −55to+150
C VoltageRateofChange(RatedVR,TJ=25C) dv/dt V/ms 1000 StressesexceedingMaximumRatingsmaydamagethedevice.MaximumRatingsarestressratingsonly.FunctionaloperationabovethemendedOperatingConditionsisnotimplied.ExtendedexposuretostressesabovethemendedOperatingConditionsmayaffectdevicereliability. THERMALCHARACTERISTICS Characteristic ThermalResistance−Junction−to−Lead(Note1)ThermalResistance−Junction−to−Ambient(Note2)
1.Mountedwithminimummendedpadsize,PCBoardFR4.2.1inchsquarepadsize(1X0.5inchforeachlead)onFR4board. SymbolRtjlRtja Value 118206 UnitC/W ELECTRICALCHARACTERISTICSCharacteristic MaximumInstantaneousForwardVoltage(Note3)(iF=0.5A)(iF=1A) MaximumInstantaneousReverseCurrent(Note3)(VR=40V)(VR=20V)
3.PulseTest:PulseWidth250ms,DutyCycle2.0%. Symbol Value Unit vF TJ=25
C TJ=100
C V 0.51 0.46 0.62 0.61 IR TJ=25
C TJ=100
C mA 20 13,000 10 5,000 100 10 10 iF,INSTANTANEOUSFORWARDCURRENT(AMPS)IF,INSTANTANEOUSFORWARDCURRENT(AMPS) 25
C 1.0 TJ=125
C TJ=-40
C TJ=25
C TJ=100
C 0.1 0.2 0.4 0.6 0.8 1.0 1.2 vF,INSTANTANEOUSFORWARDVOLTAGE(VOLTS) Figure1.TypicalForwardVoltage 1.0 TJ=125
C TJ=100
C TJ=25
C 0.1 0.2 0.4 0.6 0.8 1.0 1.2 VF,MAXIMUMINSTANTANEOUSFORWARDVOLTAGE(VOLTS) Figure2.MaximumForwardVoltage
2 MBR0540T1G,NRVB0540T1G,MBR0540T3G,NRVB0540T3G IR,REVERSECURRENT(AMPS) IO,AVERAGEFORWARDCURRENT(AMPS) 100E-
3 100E-
3 IR,MAXIMUMREVERSECURRENT(AMPS) 10E-31.0E-
3 TJ=125
C 10E-31.0E-
3 TJ=100
C 100E-6 10E-6 1.0E-6 100E-90 TJ=100
C TJ=25
C 10 20 30 VR,REVERSEVOLTAGE(VOLTS) Figure3.TypicalReverseCurrent 100E-
6 10E-
6 1.0E-
6 100E-
9 40
0 TJ=25
C 10 20 30 40 VR,REVERSEVOLTAGE(VOLTS) Figure4.MaximumReverseCurrent PFO,AVERAGEPOWERDISSIPATION(WATTS) 0.8dc 0.7 0.6 SQUAREWAVE 0.5Ipk/Io=p 0.4Ipk/Io=5 0.3Ipk/Io=10 0.2Ipk/Io=20 0.1 FREQ=20kHz 0.45 0.40 SQUAREWAVE dc 0.35Ipk/Io=p 0.30 0.25 Ipk/Io=
5 0.20 Ipk/Io=10 0.15 Ipk/Io=20 0.10 0.05
0 0 20 40 60 80 100120140 000.10.20.30.40.50.60.70.8 TL,LEADTEMPERATURE(C)Figure5.CurrentDerating IO,AVERAGEFORWARDCURRENT(AMPS)Figure6.ForwardPowerDissipation TJ,DERATEDOPERATINGTEMPERATURE(C) 100 126 TJ=25
C 124 122 Rtja=118C/W 120 1005.010152025303540 VR,REVERSEVOLTAGE(VOLTS)Figure7.Capacitance 118149C/W 116180C/W 114206C/W 112228C/W 11005.010152025303540 VR,DCREVERSEVOLTAGE(VOLTS) Figure8.TypicalOperatingTemperatureDerating* *Reversepowerdissipationandthepossibilityofthermalrunawaymustbeconsideredwhenoperatingthisdeviceunderany reversevoltageconditions.CalculationsofTJthereforemustincludeforwardandreversepowereffects.Theallowableoperating TJmaybecalculatedfromtheequation: TJ=TJmax−r(t)(Pf+Pr)where r(t)=thermalimpedanceundergivenconditions, Pf=forwardpowerdissipation,and Pr=reversepowerdissipation ThisgraphdisplaysthederatedallowableTJduetoreversebiasunderDCconditionsonlyandiscalculatedas TJ=TJmax−r(t)Pr,wherer(t)=Rthja.Forotherpowerapplicationsfurthercalculationsmustbeperformed.
C,CAPACITANCE(pF)
3 R(T),TRANSIENTTHERMALRESISTANCE(NORMALIZED) MBR0540T1G,NRVB0540T1G,MBR0540T3G,NRVB0540T3G 1E+0050%20%10% 1E-015.0%2.0%1.0% 1E-02 1E-030.00001 1E+00 50%20%1E-0110%5.0%2.0%1E-021.0% 1E-030.00001 Rtjl(t)=Rtjl*r(t) 0.0001 0.001 0.01 0.1 1.0 10
T,TIME(s) Figure9.ThermalResponseJunctiontoLead 0.0001 Rtjl(t)=Rtjl*r(t) 0.001 0.01 0.1 1.0 10
T,TIME(s) Figure10.ThermalResponseJunctiontoAmbient 100 1,000 100 1,000 R(T),TRANSIENTTHERMALRESISTANCE(NORMALIZED)
4 MECHANICALCASEOUTLINE PACKAGEDIMENSIONS SCALE5:
1 SOD−123CASE425−04 ISSUEG DATE07OCT2009
D ÂÂÂÂÂÂ1ÂÂÂÂÂÂ HE
E AA1
2 q b
L C SOLDERINGFOOTPRINT* 0.91 0.036 ÉÉÉÉÉÉÉÉÉÉÉÉÉÉÉÉÉÉ2.36 1.220.048 0.093 4.19 0.165 ǒǓSCALE10:
1 mminches *ForadditionalinformationonourPb−Freestrategyandsolderingdetails,pleasedownloadtheONSemiconductorSolderingandMountingTechniquesReferenceManual,SOLDERRM/D. NOTES:
1.DIMENSIONINGANDTOLERANCINGPERANSIY14.5M,1982.2.CONTROLLINGDIMENSION:INCH. MILLIMETERS INCHES DIMMINNOMMAXMINNOMMAX A0.941.171.350.0370.0460.053 A10.000.050.100.0000.0020.004 b0.510.610.710.0200.0240.028 c ------0.15 ------0.006 D1.401.601.800.0550.0630.071 E2.542.692.840.1000.1060.112 HE3.563.683.860.1400.1450.152L0.25------0.010------ q 0°---10° 0°---10° GENERICMARKINGDIAGRAM*
1 XXXMG
G XXX=SpecificDeviceCodeM=DateCodeG=Pb−FreePackage(Note:Microdotmaybeineitherlocation) *Thisinformationisgeneric.Pleaserefertodevicedatasheetforactualpartmarking.Pb−Freeindicator,“G”ormicrodot“G”,mayormaynotbepresent. STYLE1:PIN1.CATHODE2.ANODE DOCUMENTNUMBER:DESCRIPTION: 98ASB42927BSOD−123 ElectronicversionsareuncontrolledexceptwhenesseddirectlyfromtheDocumentRepository.Printedversionsareuncontrolledexceptwhenstamped“CONTROLLEDCOPY”inred. PAGE1OF1 ONSemiconductorand aretrademarksofSemiconductorComponentsIndustries,LLCdbaONSemiconductororitssubsidiariesintheUnitedStatesand/orothercountries. ONSemiconductorreservestherighttomakechangeswithoutfurthernoticetoanyproductsherein.ONSemiconductormakesnowarranty,representationorguaranteeregarding thesuitabilityofitsproductsforanyparticularpurpose,nordoesONSemiconductorassumeanyliabilityarisingoutoftheapplicationoruseofanyproductorcircuit,andspecifically disclaimsanyandallliability,includingwithoutlimitationspecial,consequentialorincidentaldamages.ONSemiconductordoesnotconveyanylicenseunderitspatentrightsnorthe rightsofothers. ©SemiconductorComponentsIndustries,LLC,2019 onsemi, ,andothernames,marks,andbrandsareregisteredand/monlawtrademarksofSemiconductorComponentsIndustries,LLCdba“onsemi”oritsaffiliates and/orsubsidiariesintheUnitedStatesand/orothercountries.onsemiownstherightstoanumberofpatents,trademarks,copyrights,tradesecrets,andotherintellectualproperty. Alistingofonsemi’sproduct/patentcoveragemaybeessedat/site/pdf/Patent−Marking.pdf.onsemireservestherighttomakechangesatanytimetoany productsorinformationherein,withoutnotice.Theinformationhereinisprovided“as−is”andonsemimakesnowarranty,representationorguaranteeregardingtheuracyofthe information,productfeatures,availability,functionality,orsuitabilityofitsproductsforanyparticularpurpose,nordoesonsemiassumeanyliabilityarisingoutoftheapplicationoruse ofanyproductorcircuit,andspecificallydisclaimsanyandallliability,includingwithoutlimitationspecial,consequentialorincidentaldamages.Buyerisresponsibleforitsproducts andapplicationsusingonsemiproducts,pliancewithalllaws,regulationsandsafetyrequirementsorstandards,regardlessofanysupportorapplicationsinformation providedbyonsemi.“Typical”parameterswhichmaybeprovidedinonsemidatasheetsand/orspecificationscananddovaryindifferentapplicationsandactualperformancemay varyovertime.Alloperatingparameters,including“Typicals”mustbevalidatedforeachcustomerapplicationbycustomer’stechnicalexperts.onsemidoesnotconveyanylicense underanyofitsintellectualpropertyrightsnortherightsofothers.onsemiproductsarenotdesigned,intended,orauthorizedforuseasaponentinlifesupportsystems oranyFDAClass3medicaldevicesormedicaldeviceswithasameorsimilarclassificationinaforeignjurisdictionoranydevicesintendedforimplantationinthehumanbody.Should Buyerpurchaseoruseonsemiproductsforanysuchunintendedorunauthorizedapplication,Buyershallindemnifyandholdonsemianditsofficers,employees,subsidiaries,affiliates, anddistributorsharmlessagainstallclaims,costs,damages,andexpenses,andreasonableattorneyfeesarisingoutof,directlyorindirectly,anyclaimofpersonalinjuryordeath associatedwithsuchunintendedorunauthorizeduse,evenifsuchclaimallegesthatonsemiwasnegligentregardingthedesignormanufactureofthepart.onsemiisanEqual Opportunity/AffirmativeActionEmployer.Thisliteratureissubjecttoallapplicablecopyrightlawsandisnotforresaleinanymanner. PUBLICATIONORDERINGINFORMATION LITERATUREFULFILLMENT:EmailRequeststo:orderlit@ onsemiWebsite: TECHNICALSUPPORTNorthAmericanTechnicalSupport:VoiceMail:1800−282−9855TollFreeUSA/CanadaPhone:011421337902910 Europe,MiddleEastandAfricaTechnicalSupport:Phone:00421337902910Foradditionalinformation,pleasecontactyourlocalSalesRepresentative ◊
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