RF2L16080CF2 Datasheet 80W,28V,1.3to1.7GHzRFpowerLDMOStransistor
2 1
3 A2 Pinconnection Pin Connection
1 Gate
2 Drain
3 Source(bottomside) ProductstatuslinkRF2L16080CF2 Productsummary Ordercode RF2L16080CF2 Marking 2L16080 Package A2 Packing Tapeandreel13" Base/bulkquantity 120/120 Features Ordercode Frequency VDD POUT GainEfficiency RF2L16080CF2 1625MHz 28V 80W 18dB 57% •Highefficiencyandlineargainoperations•IntegratedESDprotection•Internallyinputmatchedforeaseofuse•Largepositiveandnegativegate-sourcevoltagerangeforimprovedclassC operation•Excellentthermalstability,lowHCIdrift•pliancewiththeEuropeanDirective2002/95/EC Applications •ms••ISM Description TheRF2L16080CF2isa80W,28VinputmatchedLDMOSFETs,designedforglobalpositioningsystemmunication/ISMapplicationswithfrequenciesfrom1300to1700MHz.ItcanbeusedinclassAB,BorCforalltypicalmodulationformats. DS13222-Rev2-April2021ForfurtherinformationcontactyourlocalSTMicroelectronicssalesoffice. RF2L16080CF2 Electricalratings
1 Electricalratings SymbolV(BR)DSS VGSVDDTSTGTJ Table1.Absolutemaximumratings(TC=25°C)Parameter Drain-sourcevoltageGate-sourcevoltageMaximumoperatingvoltageStoragetemperaturerangeMaximumjunctiontemperature Value Unit 65
V -6to10
V 32
V -65to150 °
C 200 °
C Table2.Thermaldata SymbolRthJC
(1) ParameterThermalresistance,junction-to-case
1.TC=85°
C,TJ=200°
C,DCtest. SymbolHBMCDM Table3.ESDprotectionTestmethodology Humanbodymodel(ordingtoANSI/ESDA/JEDECJS001-2017)Chargedevicemodel(ordingtoANSI/ESDA/JEDECJS-002-2014) Value1.0 Unit°C/W Class0BC3 DS13222-Rev2 page2/12
2 Note: RF2L16080CF2 Electricalcharacteristics Electricalcharacteristics (TC=25°Cunlessotherwisespecified). SymbolV(BR)DSS IDSS IGSSVGS(th)VGS(Q)VDS(on)IDS(on)RDS(on) ParameterDrain-sourcebreakdownvoltage Zero-gatevoltagedraincurrent Gate-bodyleakagecurrentGatethresholdvoltageGatequiescentvoltageStaticdrain-sourceon-voltageStaticdrain-sourceon-currentStaticdrain-sourceon-resistance Table4.Static TestconditionsVGS=0V,IDS=100µAVGS=0V,VDS=28VVGS=0V,VDS=50VVGS=-6/10V,VDS=0VVDS=28V,IDS=600μAVDS=1V,IDS=700mAVGS=10V,IDS=5AVGS=10V,VDS=100mVVGS=10V,VDS=100mV Min.Typ.Max.Unit 65 -
V -
1 μ
A - - ±100nA 1.75 - 2.5
V 2 -
5 V - 0.9
V - 2.5
A -
1 Ω Symbolf POUTGPSƞDVSWR ParameterFrequencyOutputpowerPowergainDrainefficiencyLoadmismatch Table5.DynamicTestconditions f=1625MHz,pressionpointPOUT=80W,allphases VDD=28V,IDQ=400mA,pulsedCW,pulsewidth=20μs,dutycycle=10%. Min.Typ.Max.Unit 1300 1700MHz 80
W 18 dB 57 % 10:
1 DS13222-Rev2 page3/12
3 Note: RF2L16080CF2 Typicalperformances Typicalperformances f(MHz)162516501675 20 Table6.Typicalperformance(1625-1675MHz) P1dB(W)817568 GPS(dB)18.318.418.2 P3dB(W)1059588 Figure1.Gainandefficiencyvsoutputpower(1625-1675MHz) ƞD@P3dB(%)575757 60 19 50 Powergain,GPS(dB)Drainefficiency,ηD(%) 18 40 17 30 16 20 150 10 20 GPSη
D 30 40 50 60 70 Outputpower,POUT(W) 1625MHz 1650MHz 10 80 90 100 110 1675MHz GADG8SA VDD=28V,IDQ=400mA,pulsedCW,pulsewidth=20μs,dutycycle=10%. DS13222-Rev2 page4/12 RF2L16080CF2 Testcircuits
4 Testcircuits Figure2.Testcircuitlayout(1625-1675MHz) 2L16080 RF2L16080CF2 Figure3.Testcircuitphoto(1625-1675MHz) GGAADDGG011115544SSAA 2L16080 GADG5SA DS13222-Rev2 page5/12 ComponentC1,C2,C3,C4 C5,C6,C7C8C9 C10,C11 C12 R1PCB RF2L16080CF2 Testcircuits Table7.Componentslist Value Size Reference 27pF 0805 ATC600F 2pF 0805 ATC600F 0.5pF 0805 ATC600F 0.9pF 0805 ATC600F 10μ
F 1210 Ceramicmultilayercapacitor 100μ
F Aluminumelectrolyticcapacitor 10Ω 0805 Chipresistor 0.762mm(.030")thick,ɛr=3.48,RogersRO4350B,1oz.copper DS13222-Rev2 page6/12 RF2L16080CF2 Packageinformation
5 Packageinformation Inordertomeetenvironmentalrequirements,SToffersthesedevicesindifferentgradesofECOPACKpackages,dependingontheirlevelofpliance.ECOPACKspecifications,gradedefinitionsandproductstatusareavailableat:.ECOPACKisanSTtrademark. 5.1 A2packageinformation Figure4.A2packageoutline DS13222-Rev2 DM00418526_2 page7/12 Symbol ABCDEFGHICH1R Table8.A2mechanicaldata Min.10.0310.030.8915.219.653.431.446.982.08 MillimetresTyp.10.1610.161.0215.349.783.561.577.112.592.03 RF2L16080CF2 A2packageinformation Max.10.2910.291.1515.479.913.691.707.243.10 0.63 DS13222-Rev2 page8/12 RF2L16080CF2 Markinginformation
6 Markinginformation Figure5.position PACKAGEFACE:TOP
A CDE BFGH LEGEND UnmarkableSurface MarkingCompositionFieldA-STANDARDSTLOGO B-ECOlevel (e4) C-MARKINGAREAD-ADDITIONAL INFORMATION (MAXCHARALLOWED=7) E-COUNTRYOFORIGIN (MAXCHARALLOWED=3) F-AssyPlant (PP) G-AssyYear (Y) H-AssyWeek (WW) GADG040220211644GT DS13222-Rev2 page9/12 Revisionhistory Date04-May-2020 20-Apr-2021 RF2L16080CF2 Table9.Documentrevisionhistory Version1
2 Changes Firstrelease. Modifiedefficiencyandmarkingvaluesoncoverpage. ModifiedTable1.Absolutemaximumratings(TC=25°C),Table2.Thermaldata,Table3.ESDprotection,Table4.Static,Table5.Dynamic,Figure1.Gainandefficiencyvsoutputpower(1625-1675MHz),Figure2.Testcircuitlayout(1625-1675MHz),Figure3.Testcircuitphoto(1625-1675MHz)andTable7.Componentslist. AddedSection6Markinginformation. Minortextchanges. DS13222-Rev2 page10/12 RF2L16080CF2 Contents Contents 1Electricalratings..................................................................22Electricalcharacteristics...........................................................33Typicalperformances..............................................................44Testcircuits.......................................................................55Packageinformation...............................................................7 5.1A2packageinformation.........................................................76Markinginformation...............................................................9Revisionhistory.......................................................................10 DS13222-Rev2 page11/12 RF2L16080CF2 IMPORTANTNOTICE–PLEASEREADCAREFULLYSTMicroelectronicsNVanditssubsidiaries(“ST”)reservetherighttomakechanges,corrections,enhancements,modifications,andimprovementstoSTproductsand/ortothisdocumentatanytimewithoutnotice.PurchasersshouldobtainthelatestrelevantinformationonSTproductsbeforeplacingorders.STproductsaresoldpursuanttoST’stermsandconditionsofsaleinplaceatthetimeoforderacknowledgement.Purchasersaresolelyresponsibleforthechoice,selection,anduseofSTproductsandSTassumesnoliabilityforapplicationassistanceorthedesignofPurchasers’products.Nolicense,expressorimplied,toanyintellectualpropertyrightisgrantedbySTherein.ResaleofSTproductswithprovisionsdifferentfromtheinformationsetforthhereinshallvoidanywarrantygrantedbySTforsuchproduct.STandtheSTlogoaretrademarksofST.ForadditionalinformationaboutSTtrademarks,pleasereferto/trademarks.Allotherproductorservicenamesarethepropertyoftheirrespectiveowners.Informationinthisdocumentsupersedesandreplacesinformationpreviouslysuppliedinanypriorversionsofthisdocument. ©2021STMicroelectronics–Allrightsreserved DS13222-Rev2 page12/12