V,40AAlphaIGBTTMWithsoftandfastrecoveryanti-paralleldiode GeneralDescription •LatestAlphaIGBT(αIGBT)technology•650Vbreakdownvoltage•Veryfastandsoftrecoveryfreewheelingdiode•Highefficientturn-ondi/dtcontrollability•Veryhighswitchingspeed•Lowturn-offswitchinglossandsoftness•VerygoodEMIbehavior ProductSummary VCEIC(TC=100°C)VCE(sat)(TJ=25°C) 650V40A2.05V Applications •WeldingMachines•UPS&SolarInverters•VeryHighSwitchingFrequencyApplications TO-247
C AOK40B65H2AL ECG GE OrderablePartNumberPackageType AOK40B65H2AL TO247 AbsoluteMaximumRatingsTA=25°Cunlessotherwisenoted Parameter Symbol Collector-EmitterVoltage VCE Gate-EmitterVoltage VGE ContinuousCollectorTC=25°
C I Current TC=100°
C C PulsedCollectorCurrent,LimitedbyTJmax ICM TurnoffSOA,VCE≤650V,LimitedbyTJmax ILM ContinuousDiodeTC=25°
C I ForwardCurrent TC=100°
C F DiodePulsedCurrent,LimitedbyTJmax IFM PowerDissipationTC=25°CPDTC=100°
C JunctionandStorageTemperatureRange TJ,TSTG Mpuarxpiomsuem,1l/e8a"dfrtoemmpcearsaetuforer5fosrescooldnedrsingTL ThermalCharacteristics Parameter Symbol MaximumJunction-to-Ambient RqJA MaximumIGBTJunction-to-Case RqJC MaximumDiodeJunction-to-Case RqJC Form Tube MinimumOrderQuantity 240 AOK40B65H2AL650±308040120120402060260105 -55to150 300 UnitsVVA AAA AW °C°
C Typical400.481.6 Units°C/W°C/W°C/W Rev.1.1:June2020 Page1of9 AOK40B65H2AL ElectricalCharacteristics(TJ=25°Cunlessotherwisenoted) Symbol Parameter Conditions Min STATICPARAMETERS BVCESCollector-EmitterBreakdownVoltageIC=1mA,VGE=0V,TJ=25°
C 650 TJ=25°
C - VCE(sat)Collector-EmitterSaturationVoltageVGE=15V,IC=40ATJ=125°
C - TJ=150°
C - VF DiodeForwardVoltage TJ=25°
C - VGE=0V,IF=20A TJ=125°
C - VGE(th)Gate-EmitterThresholdVoltage TJ=150°
C - VCE=5V,IC=1mA - TJ=25°
C - ICES ZeroGateVoltageCollectorCurrentVCE=650V,VGE=0VTJ=125°
C - IGES Gate-Emitterleakagecurrent TJ=150°
C - VCE=0V,VGE=±30V - gFS ForwardTransconductance VCE=20V,IC=40A - DYNAMICPARAMETERS CiesCoes InputCapacitanceOutputCapacitance - VGE=0V,VCC=25V,f=1MHz - Cres ReverseTransferCapacitance - Qg TotalGateCharge Qge GatetoEmitterCharge - VGE=15V,VCC=520V,IC=40A - Qgc GatetoCollectorCharge - Rg Gateresistance VGE=0V,VCC=0V,f=1MHz - SWITCHINGPARAMETERS,(LoadInductive,TJ=25°C) tD(on) Turn-OnDelayTime - tr Turn-OnRiseTime - tD(off)tfEon Turn-OffDelayTimeTurn-OffFallTimeTurn-OnEnergy TJ=25°
C - VGE=15V,VCC=400V,IC=40A, - RG=7.5W - Eoff Turn-OffEnergy - Etotal TotalSwitchingEnergy - trrDiodeReverseRecoveryTimeTJ=25°C- QrrDiodeReverseRecoveryChargeIF=20A,dI/dt=200A/ms,VCC=400V- Irm DiodePeakReverseRecoveryCurrent - SWITCHINGPARAMETERS,(LoadInductive,TJ=150°C) tD(on) Turn-OnDelayTime - tr Turn-OnRiseTime - tD(off)tfEon Turn-OffDelayTimeTurn-OffFallTimeTurn-OnEnergy TJ=150°
C - VGE=15V,VCC=400V,IC=40A, - RG=7.5W - Eoff Turn-OffEnergy - Etotal TotalSwitchingEnergy - trrDiodeReverseRecoveryTimeTJ=150°C- QrrDiodeReverseRecoveryChargeIF=20A,dI/dt=200A/ms,VCC=400V- Irm DiodePeakReverseRecoveryCurrent - TypMaxUnits - -
V 2.052.6 2.57 -
V 2.71 - 2.122.7 2.14 -
V 2.1 - 4.7 -
V - 10 - 500mA -5000 -±100nA 24 -
S 1230- pF 115 - pF 44 - pF 61 - nC 18 - nC 27 - nC 11 -
W 30 - ns 30 - ns 117 - ns 16 - ns 1.17 - mJ 0.54 - mJ 1.71 - mJ 315 - ns 0.7 - mC 4.7 -
A 29 - ns 35 - ns 133 - ns 18 - ns 1.27 - mJ 0.78 - mJ 2.06 - mJ 413 - ns 1.2 - mC 5.8 -
A APPLICATIONS
ORUSESASCRITICALCOMPONENTSINLIFESUPPORTDEVICESORSYSTEMSARENOTAUTHORIZED.AOSDOESNOTASSUMEANYLIABILITYARISINGOUTOFSUCHAPPLICATIONSORUSESOFITSPRODUCTS.AOSRESERVESTHERIGHTTOMAKECHANGESTOPRODUCTSPECIFICATIONSWITHOUTNOTICE.ITISTHERESPONSIBILITYOFTHECUSTOMERTOEVALUATESUITABILITYOFTHEPRODUCTFORTHEIRINTENDEDAPPLICATION.CUSTOMERSHALLCOMPLYWITHAPPLICABLELEGALREQUIREMENTS,INCLUDINGALLAPPLICABLEEXPORTCONTROLRULES,REGULATIONSANDLIMITATIONS. AOS'productsareprovidedsubjecttoAOS'termsandconditionsofsalewhicharesetforthat:/terms_and_conditions_of_sale Rev.1.1:June2020 Page2of9 □ TYPICALELECTRICALANDTHERMALCHARACTERISTICS 150 150 20V 17V 13V 120 15V 120 90 11V 90 IC(A) IC(A) 60 30 00 9VVGE=7V
1 2
3 4
5 6
7 VCE(V)Figure1:OutputCharacteristic (Tj=25°C) 60 30 00 IC(A) 100 VCE=20V80 60150°C 4025°C 20 -40°
C 0
3 6
9 12 15 VGE(V)Figure3:TransferCharacteristic IF(A) 605040302010 00 AOK40B65H2AL 17V20V15V13V 11V 9V VGE=7V
1 2
3 4
5 6
7 VCE(V)Figure2:OutputCharacteristic (Tj=150°C) -40°C25°
C 150°
C 1
2 3
4 5 VF(V)Figure4:DiodeCharacteristic VCE(sat)(V) 5IC=80A
4 3IC=40A
2 1 IC=20A
0 0 25 50 75 100125150 Temperature(°C)Figure5:Collector-EmitterSaturationVoltagevs. JunctionTemperature VF(V) 340A 2.5 220A 1.5 5A1 IF=1A0.5
0 0 25 50 75 100125150 Temperature(°C)Figure6:DiodeForwardvoltagevs.Junction Temperature Rev.1.1:June2020 Page3of9 AOK40B65H2AL □ TYPICALELECTRICALANDTHERMALCHARACTERISTICS 15 VCE=520VIC=40A12 10000 Cies1000 Capacitance(pF) VGE(V)
9 Coes 100 6Cres 103
0 0 15 30 45 60 75 Qg(nC)Figure7:Gate-ChargeCharacteristics
1 0
8 16 24 32 40 VCE(V)Figure8:CapacitanceCharacteristic PowerDisspation(W) 300 250 200 150 100 50
0 25 50 75 100 125 150 TCASE(°C)Figure10:PowerDisspationasaFunctionofCase CurrentratingIC(A) 10080604020025 50 75 100 125 150 TCASE(°C)Figure11:CurrentDe-rating ICE(S)(A) 1E-02 1E-03 1E-041E-05 VCE=650V 1E-061E-07 VCE=520V 1E-080 25 50 75 100125150 Temperature(°C)Figure12:DiodeReverseLeakageCurrentvs. JunctionTemperature Rev.1.1:June2020 Page4of9 ≤ TYPICALELECTRICALANDTHERMALCHARACTERISTICS 100001000 Td(off)TfTd(on)Tr 100001000 AOK40B65H2AL Td(off)TfTd(on)Tr SwitchingTime(ns) SwitchingTime(ns) 100 100 10 10 SwitchingTime(ns) 120 100001000 30 40 50 60 70 80 IC(A)Figure13:SwitchingTimevs.IC (Tj=150°
C,VGE=15V,VCE=400V,Rg=7.5W) Td(off)TfTd(on)Tr 100 10
1 25 50 75 100 125 150 TJ(°C)Figure15:SwitchingTimevs.Tj (VGE=15V,VCE=400V,IC=40A,Rg=7.5W) VGE(TH)(V) 10 7654321
0 15 30 45 60 75 Rg(W)Figure14:SwitchingTimevs.Rg(Tj=150°
C,VGE=15V,VCE=400V,IC=40A) 25 50 75 100125150 TJ(°C)Figure16:VGE(TH)vs.Tj Rev.1.1:June2020 Page5of9 ≤ TYPICALELECTRICALANDTHERMALCHARACTERISTICS 10
5 Eoff Eon
8 4 Etotal
6 3 EoffEonEtotal AOK40B65H2AL SwitchingEnergy(mJ) SwitchIngEnergy(mJ)
4 2
2 1 SwitchingEnergy(mJ) 020 32.5
2 30 40 50 60 70 80 IC(A)Figure17:SwitchingLossvs.IC(Tj=150°
C,VGE=15V,VCE=400V,Rg=7.5W) EoffEonEtotal 1.5
1 0.5
0 25 50 75 100 125 150 TJ(°C)Figure19:SwitchingLossvs.Tj (VGE=15V,VCE=400V,IC=40A,Rg=7.5W) SwitchingEnergy(mJ) 00 32.5
2 15 30 45 60 75 Rg(W)Figure18:SwitchingLossvs.Rg(Tj=150°
C,VGE=15V,VCE=400V,IC=40A) EoffEonEtotal 1.5
1 0.5 0 200250300350400450500 VCE(V)Figure20:SwitchingLossvs.VCE(Tj=150°
C,VGE=15V,IC=40A,Rg=7.5W) Rev.1.1:June2020 Page6of9 AOK40B65H2AL □ TYPICALELECTRICALANDTHERMALCHARACTERISTICS
S Qr(nC) 2000 30 1600 24 150°
C 1200 18 800 Qrr 25°C12 150°
C 400
6 25°
C Irm
0 0 10 15 20 25 30 35 40 IF(A)Figure21:DiodeReverseRecoveryChargeand PeakCurrentvs.ConductionCurrent (VGE=15V,VCE=400V,di/dt=200A/ms) 2000 40 Irm(A)Trr(ns) 600 30 480150°C25 20 360 Trr240 1525°
C 150°
C 10 120 010 25°
C 5S
0 15 20 25 30 35 40 IF(A)Figure22:DiodeReverseRecoveryTimeand SoftnessFactorvs.ConductionCurrent (VGE=15V,VCE=400V,di/dt=200A/ms) 500 40
S Qrr(nC) 1600 32150°
C 1200Qrr 800 24 25°C16 150°C400 25°
C Irm
8 0
0 200300400500600700800 di/dt(A/ms)Figure23:DiodeReverseRecoveryChargeand PeakCurrentvs.di/dt(VGE=15V,VCE=400V,IF=20A) Irm(A)Trr(nS) 400Trr 300 32150°C 24 200 25°
C 16 150°
C 100
8 0200 25°
C S 0300400500600700800 di/dt(A/ms)Figure24:DiodeReverseRecoveryTimeand SoftnessFactorvs.di/dt(VGE=15V,VCE=400V,IF=20A) Rev.1.1:June2020 Page7of9 AOK40B65H2AL □ TYPICALELECTRICALANDTHERMALCHARACTERISTICS 10D=Ton/TTJ,PK=TC+PDM.ZqJC.RqJC 1RqJC=0.48°C/W IndescendingorderD=0.5,0.3,0.1,0.05,0.02,0.01,singlepulse ZqJCNormalizedTransientThermalResistance 0.1 0.010.001 SinglePulse PDM TonT 0.0001 1E-06 1E-05 0.0001 0.001 0.01 0.1
1 10 100 PulseWidth(s)Figure25:NormalizedMaximumTransientThermalImpedanceforIGBT ZqJCNormalizedTransientThermalResistance 10D=Ton/T TJ,PK=TC+PDM.ZqJC.RqJC1RqJC=1.6°C/W IndescendingorderD=0.5,0.3,0.1,0.05,0.02,0.01,singlepulse 0.1 0.010.001 SinglePulse PDM TonT 0.0001 1E-06 1E-05 0.0001 0.001 0.01 0.1
1 10 100 PulseWidth(s)Figure26:NormalizedMaximumTransientThermalImpedanceforDiode Rev.1.1:June2020 Page8of9 AOK40B65H2AL FigureA:GateChargeTestCircuit&Waveforms FigureB:InductiveSwitchingTestCircuit&Waveforms FigureC:DiodeRecoveryTestCircuit&Waveforms Rev.1.1:June2020 Page9of9