FACTORCORRECTOR 1FEATURES ■VERYPRECISEADJUSTABLEOUTPUTOVERVOLTAGEPROTECTION ■MICROPOWERSTART-UPCURRENT(50µATYP.) ■VERYLOWOPERATINGSUPPLYCURRENT(4mATYP.) ■INTERNALSTART-UPTIMER■CURRENTSENSEFILTERONCHIP■DISABLEFUNCTION■1%PRECISION(@Tj=25°C)INTERNAL REFERENCEVOLTAGE■TRANSITIONMODEOPERATION■TOTEMPOLEOUTPUTCURRENT:±400mA■DIP-8/SO-8PACKAGES 2DESCRIPTION L6561istheimprovedversionoftheL6560standardPowerFactorCorrector.patiblewiththestandardversion,ithasasuperiorperformantmultipliermakingthedevicecapableofworkinginwideinputvoltagerangeapplications(from85Vto265V)withanexcellentTHD.FurthermorethestartupcurrenthasbeenreducedatfewtensofmAandadisablefunctionhasbeenimplementedontheZCDpin,guaranteeinglowercurrentconsumptioninstandbymode. Figure1.Packages DIP-
8 Table1.OrderCodes PartNumberL6561L6561D L6561D013TR SO-
8 PackageDIP-8SO-
8 Tape&Reel RealisedinmixedBCDtechnology,thechipgivesthefollowingbenefits: –micropowerstartupcurrent–1%precisioninternalreferencevoltage–(Tj=25°C)–SoftOutputOverVoltageProtection–noneedforexternallowpassfilteronthecur- rentsense–verylowoperatingquiescentcurrentminimis- espowerdissipation ThetotempoleoutputstageiscapableofdrivingaPowerMOSorIGBTwithsourceandsinkcurrentsof±400mA.ThedeviceisoperatingintransitionmodeanditisoptimisedforElectronicLampBallastapplication,AC-DCadaptorsandSMPS. Figure2.BlockDiagram 1INV 2.5V + COMP2 MULT3 MULTIPLIER CS4 40K VOLTAGEREGULATOR OVER-VOLTAGEDETECTION -+ 5pF 8VCC 20V R2 INTERNALSUPPLY7VR1 + VREF2 2.1V1.6V UVLO RQS DRIVER ZEROCURRENT+DETECTOR - STARTER VCC7GD 6GND 5ZCD DISABLE D97IN547E June2004 REV.161/13 L6561 Table2.AbsoluteMaximumRatings Symbol Pin Parameter Value Unit 8Iq+IZ;(IGD=0) 30 mA IGD 7OutputTotemPolePeakCurrent(2µs) ±700 mA INV,COMP1,2,3AnalogInputs&OutputsMULT -0.3to7
V CS 4CurrentSenseInput -0.3to7
V ZCD 5ZeroCurrentDetector 50(source) mA -10(sink) mA Ptot PowerDissipation@Tamb=50°
C (DIP-8)
1 W (SO-8) 0.65
W Tj JunctionTemperatureOperatingRange -40to150 °
C Tstg StorageTemperature -55to150 °
C Figure3.PinConnection(Topview) INVCOMPMULT CS
1 8
2 7
3 6
4 5 DIP8 VCCGDGNDZCD Table3.ThermalData Symbol Parameter Rthj-ambThermalResistanceJunctiontoambient SO8150 MINIDIP100 Unit°C/W Table4.PinDescription
N. Name Function
1 INVInvertinginputoftheerroramplifier.Aresistivedividerisconnectedbetweentheoutput regulatedvoltageandthispoint,toprovidevoltagefeedback.
2 COMPOutputoferroramplifier.Aworkisplacedbetweenthispinandthe INVpin.
3 MULTInputofthemultiplierstage.Aresistivedividerconnectstothispintherectifiedmains.Avoltage signal,proportionaltotherectifiedmains,appearsonthispin.
4 CSInputtoparatorofthecontrolloop.Thecurrentissensedbyaresistorandtheresulting voltageisappliedtothispin.
5 ZCDZerocurrentdetectioninput.IfitisconnectedtoGND,thedeviceisdisabled.
6 GNDCurrentreturnfordriverandcontrolcircuits.
7 GDGatedriveroutput.ApushpulloutputstageisabletodrivethePowerMOSwithpeakcurrentof 400mA(sourceandsink).
8 VCCSupplyvoltageofdriverandcontrolcircuits.
(1)Parameterguaranteedbydesign,nottestedinproduction. 2/13 L6561 Table5.ElectricalCharacteristics(VCC=14.5V;Tamb=-25°Cto125°C;unlessotherwisespecified) SymbolPin Parameter SUPPLYVOLTAGESECTION VCC 8OperatingRange VCCON8Turn-onThreshold VCCOFF8Turn-offThreshold Hys 8Hysteresis SUPPLYCURRENTSECTION ISTART-U8Start-upCurrent Iq 8QuiescentCurrent ICC 8OperatingSupplyCurrent Iq 8QuiescentCurrent
8 VZ 8ZenerVoltage ERRORAMPLIFIERSECTION VINV 1VoltageFeedbackInput Threshold LineRegulation IINV 1InputBiasCurrent GV VoltageGain GB GainBandwidth ICOMP2SourceCurrent SinkCurrent VCOMP2UpperClampVoltage LowerClampVoltage MULTIPLIERSECTION VMULT3LinearOperatingVoltage ∆VCS----------------∆Vmult OutputMax.Slope TestCondition afterturn-on beforeturn-on(VCC=11V) CL=1nF@70KHzinOVPconditionVpin1=2.7VVPIN5≤150mV,VCC>VCCoffVPIN5≤150mV,VCCK Gain CURRENTSENSECOMPARATOR VCS 4CurrentSenseReference Clamp ICStd(H-L) 4InputBiasCurrent4DelaytoOutput 4CurrentSenseOffset ZEROCURRENTDETECTOR VZCD 5InputThresholdVoltageRisingEdge Hysteresis VZCDVZCD 5UpperClampVoltage5UpperClampVoltage VMULT=1VVCOMP=4V VMULT=2.5VVCOMP=UpperClampVoltageVOS=
0
(1)(1)IZCD=20µAIZCD=3mA Min.11118.72.220 20182.4652.44 60-22.5 0to31.650.451.6 0.34.54.7 Typ. 129.52.5 502.641.41.45020 2.5 2-0.180 1-44.55.82.25 0to3.51.9 0.6 1.7 -0.05200 0 2.1 0.55.15.2 Max.181310.32.89045.52.12.19022 2.5352.56 5-
1 -8 0.75 1.8-145015 0.75.96.1 Unit VVVV µAmAmAmAmAµAV VVmVµAdBMHzmAmAVV V 1/V
V µAnsmV
V VVV 3/13 L6561 Table5.ElectricalCharacteristics(continued)(VCC=14.5V;Tamb=-25°Cto125°C;unlessotherwisespecified) SymbolPin Parameter VZCD 5LowerClampVoltage IZCD 5SinkBiasCurrent IZCD 5SourceCurrentCapability IZCD 5SinkCurrentCapability VDIS 5Disablethreshold IZCD 5RestartCurrentAfterDisable OUTPUTSECTION VGD 7DropoutVoltage tr 7OutputVoltageRiseTime tf 7OutputVoltageFallTime IGDoff7IGDSinkCurrent OUTPUTOVERVOLTAGESECTION IOVP 2OVPTriggeringCurrent StaticOVPThreshold RESTARTTIMER tSTART StartTimer TestConditionIZCD=-3mA1V≤VZCD≤4.5V VZCDVCCOFF IGDsource=200mAIGDsource=20mAIGDsink=200mAIGDsink=20mACL=1nFCL=1nFVCC=3.5VVGD=1V Min.Typ.Max.Unit 0.30.65
1 V
2 µ
A -
3 -10 mA
3 10 mA 150200250mV -100-200-300µ
A 1.2
2 V 0.7
1 V 1.5
V 0.3
V 40 100 ns 40 100 ns
5 10 - mA 35 40 45 µ
A 2.1
2.252.4
V 70 150400 µs 3OVERVOLTAGEPROTECTIONOVP TheoutputvoltageisexpectedtobekeptbytheoperationofthePFCcircuitclosetoitsnominalvalue.ThisissetbytheratioofthetwoexternalresistorsR1andR2(seefig.5),takingintoconsiderationthatthenoninvertinginputoftheerroramplifierisbiasedinsidetheL6561at2.5V. Insteadystateconditions,thecurrentthroughR1andR2is:
I = Vout–2.5------------------------- =
I =2----.-5----V--- R1sc R1 R2R2 and,iftheworkismadeonlywithacapacitorp,thecurrentthroughpequalszero.WhentheoutputvoltageincreasesabruptlythecurrentthroughR1es:
I = Voutsc+∆Vout–2.5---------------------------------------------------- =
I +∆
I R1 R1 R1scR1 SincethecurrentthroughR2doesnotchange,∆IR1mustflowthroughthecapacitorpandentertheerroramplifier. ThiscurrentismonitoredinsidetheL6561andwhenreachesabout37µAtheoutputvoltageofthemultiplierisforcedtodecrease,thusreducingtheenergydrawnfromthemains.Ifthecurrentexceeds40µA,theOVPprotectionistriggered(DynamicOVP),andtheexternalpowertransistorisswitchedoffuntilthe currentfallsapproximatelybelow10µ
A. However,iftheovervoltagepersists,anparator(StaticOVP)confirmstheOVPconditionkeepingtheexternalpowerswitchturnedoff(seefig.4).Finally,theovervoltagethattriggerstheOVPfunctionis: ∆Vout=R1·40µ
A. TypicalvaluesforR1,R2andCareshownintheapplicationcircuits.Theovervoltagecanbesetindepen- 4/13 L6561 dentlyfromtheaverageoutputvoltage.Theprecisioninsettingtheovervoltagethresholdis7%oftheovervoltagevalue(forinstance∆V=60V±4.2V). 3.1DisablefunctionThezerocurrentdetector(ZCD)pincanbeusedfordevicedisablingaswell.BygroundingtheZCDvoltagethedeviceisdisabledreducingthesupplycurrentconsumptionat1.4mAtypical(@14.5Vsupplyvoltage).ReleasingtheZCDpintheinternalstart-uptimerwillrestartthedevice.Figure4. OVERVOLTAGE VOUTnominal 40µAISC10µ
A E/AOUTPUT2.25V DYNAMICOVP STATICOVP Figure5.OvervoltageProtectionCircuit +VoR1 R2 p. 1E/A+ 2.5V ∆
I ∆I2 +2.25V D97IN591 40µ
A D97IN592A
X PWM DRIVER 5/13 L6561 Figure6.TypicalApplicationCircuit(80W,110VAC) D1BYT03-400 FUSE4A/250V BRIDGE+4x1N4007 Vac(85Vto135V) NTC C11µF250V R3(*)240K R9(*)950K R1010K D31N4150 D21N5248B C6R2100 10nFR1
T C3680nF68K
8 C222µF25V
3 C710nF
5 2
1 L65617
6 4 R7(*)950K R5 MOS STP7NA4010 R6(*) R8 0.31 10K 1W 1% (*)R3=2x120KΩR6=0.619Ω/2R7=2x475KΩ,1%R9=2x475KΩ TRANSFORMER D97IN549B T:coreTHOMSON-CSFB1ET2910A(ETD29x16x10mm)OREQUIVALENT(OREGA473201A7) primary90TofLitzwire10x0.2mm secondary11Tof#27AWG(0.15mm) gap1.8mmforatotalprimaryinductanceof0.7mH Figure7.TypicalApplicationCircuit(120W,220VAC) D1BYT13-600 R3(*)440K BRIDGE+4x1N4007FUSE2A/250V Vac(175Vto265V) NTC C1560nF400V R9(*)1.82M R1010K D31N4150 D21N5248B C6R2100 10nFR1
T C31µF68K C222µF25V 8 3C710nF
5 2
1 L65617
6 4 R7(*)998K R5 MOS STP5NA5010 R6(*)0.411W R86.34K 1% (*)R3=2x220KΩR6=0.82Ω/2R7=2x499KΩ,1%R9=2x909KΩ TRANSFORMER D97IN550B T:coreTHOMSON-CSFB1ET2910A(ETD29x16x10mm)OREQUIVALENT(OREGA473201A8) primary90TofLitzwire10x0.2mm secondary7Tof#27AWG(0.15mm) gap1.25mmforatotalprimaryinductanceof0.8mH Figure8.TypicalApplicationCircuit(80W,Wide-rangeMains) D1BYT13-600 BRIDGE+4x1N4007FUSE4A/250V Vac(85Vto265V) C11µF400V NTC R3(*)240K R9(*)1.24M R1010K D31N4150 D21N5248B C6R2100 12nFR1
T C31µF68K C222µF25V 8 3C710nF
5 2
1 L65617
6 4 R7(*)998K R5 MOS STP8NA5010 R6(*)0.411W R86.34K 1% (*)R3=2x120KΩR6=0.82Ω/2R7=2x499KΩ,1%R9=2x620KΩ TRANSFORMER D97IN553B T:coreTHOMSON-CSFB1ET2910A(ETD29x16x10mm)OREQUIVALENT(OREGA473201A8) primary90TofLitzwire10x0.2mm secondary7Tof#27AWG(0.15mm) gap1.25mmforatotalprimaryinductanceof0.8mH 6/13 + Vo=240VPo=80W C5100µF315V - + Vo=400VPo=120W C556µF450V - + Vo=400VPo=80W C547µF450V - L6561 Figure9.DemoBoard(EVAL6561-80)ElectricalSchematic FUSE4A/250V Vac(85Vto265V) BRIDGE+W04M C11µF400V - R4R5180k180k R1750k R2750k T1ND41850C512nFR14 D21N5248B 100 R668k R5012kC3470nF C231µ
F 85
2 1 R7 33 3L65617
6 4 D1STTH1L06 NTC2.5 R11750k R12750k MOSSTP8NM50 R310k C210nF C2922µF 25V C4100nF BoostInductorSpec(ITACOILE2543/E)E25x13x7core,3C85ferrite1.5mmgapfor0.7mHprimaryinductancePrimary:105turns20x0.1mmSecondary:11turns0.1mm D31N4148 C710µF35V R1691k R15220 R90.41 1W THDREDUCER(optional) R100.41 1W R139.53k Vo=400VPo=80W C647µF450V - Figure10.EVAL6561-80:PCBandComponentLayout(Topview,realsize57x108mm) Table6.EVAL6561-80:EvaluationResults. Vin(Vac) 85110135175220265 Pin(W)Vo(Vdc)∆Vo(Vdc) 87.2400.1 14 85.2400.1 14 84.2400.1 14 83.5400.1 14 83.1400.1 14 82.9400.1 14 Po(W) 80.780.780.780.780.780.7 η(%) 92.894.795.896.697.197.3 w/oTHDreducer PF THD(%) 0.999 3.7 0.996 5.0 0.989 6.2 0.976 8.3 0.940 10.7 0.890 13.7 withTHDreducer PF THD(%) 0.999 2.9 0.996 3.2 0.989 3.7 0.976 4.3 0.941 5.6 0.893 8.1 7/13 L6561 Figure
11.OVPCurrentThresholdvs.Temperature IOVP(µA) D94IN047A 41 40 39 38-50-250255075100125T(˚C) Figure13.SupplyCurrentvs.SupplyVoltage ICC(mA) D97IN548A 10510.50.10.050.010.0050
0 CL=1nFf=70KHz TA=25˚
C 5 10 15 20VCC(V) Figure12.UndervoltageLockoutThresholdvs.Temperature VCC-ON(V) D94IN044A 13 12 11 VCC-OFF(V)10 9-250255075100125T(˚C) Figure14.VoltageFeedbackInputThresholdvs.Temperature VREF(V) D94IN048A 2.50 2.48 2.46 -50
0 50 100T(˚C) 8/13 Figure15.OutputSaturationVoltagevs.SinkCurrent VPIN7(V) D94IN046 VCC=14.5V2.0 SINK 1.5 1.0 0.5 00 100200300400IGD(mA) L6561 Figure17.MultiplierCharacteristicsFamily VCS(pin4)(V)uppervoltage clamp 1.6 5.0 1.4 4.0 1.2 1.0 4.5 D97IN555A VCOMP(pin2)(V) 3.5 3.2 0.8 0.6 3.0 0.40.20
0 2.8 2.6 0.51.01.52.02.53.03.54.04.5 VMULT(pin3)(V) Figure16.OutputSaturationVoltagevs.SourceCurrent VPIN7(V) VCC-0.5 VCC=14.5V D94IN053 VCC-1.0 VCC-1.5 VCC-2.0 00 SOURCE100200300400IGD(mA) 9/13 L6561 Figure18.DIP-8MechanicalData&PackageDimensions DIM. MIN. mmTYP.MAX.MIN. inchTYP. MAX.
A 3.32 0.131 a10.51 0.020 B1.15 1.650.045 0.065 b0.356 0.550.014 0.022 b10.204 0.3040.008 0.012
D 10.92 0.430 E7.95 9.750.313 0.384 e 2.54 0.100 e3 7.62 0.300 e4 7.62 0.300
F 6.6 0.260
I 5.08 0.200 L
3.18 3.810.125 0.150
Z 1.52 0.060 OUTLINEANDMECHANICALDATA DIP-
8 10/13 Figure19.SO-8MechanicalData&PackageDimensions DIM. MIN. mmTYP.MAX.MIN. inchTYP.MAX. A1.35 1.750.053 0.069 A10.10 0.250.004 0.010 A21.10 1.650.043 0.065 B0.33 0.510.013 0.020 C0.19 0.250.007 0.010 D(1)4.80 5.000.189 0.197 E3.80 4.000.15 0.157 e 1.27 0.050 H5.80 6.200.228 0.244 h0.25 0.500.010 0.020 L0.40 1.270.016 0.050 k 0˚(min.),8˚(max.) ddd 0.10 0.004 Note:
(1)DimensionsDdoesnotincludemoldflash,protrusionsorgateburrs.Moldflash,potrusionsorgateburrsshallnotexceed0.15mm(.006inch)intotal(bothside). OUTLINEANDMECHANICALDATA SO-
8 L6561 0016023C 11/13 L6561 Table7.RevisionHistory Date Revision January2004 15 June2004 16 DescriptionofChanges FirstIssue ModifiedtheStyle-lookpliancewiththe“CorporateTechnicalPublicationsDesignGuide”.ChangedinputofthepoweramplifierconnectedtoMultiplier(Fig.2). 12/13 L6561 Informationfurnishedisbelievedtobeurateandreliable.However,STMicroelectronicsassumesnoresponsibilityfortheconsequencesofuseofsuchinformationnorforanyinfringementofpatentsorotherrightsofthirdpartieswhichmayresultfromitsuse.NolicenseisgrantedbyimplicationorotherwiseunderanypatentorpatentrightsofSTMicroelectronics.Specificationsmentionedinthispublicationaresubjecttochangewithoutnotice.Thispublicationsupersedesandreplacesallinformationpreviouslysupplied.STMicroelectronicsproductsarenotauthorizedforuseasponentsinlifesupportdevicesorsystemswithoutexpresswrittenapprovalofSTMicroelectronics. TheSTlogoisaregisteredtrademarkofSTMicroelectronics.Allothernamesarethepropertyoftheirrespectiveowners©2004STMicroelectronics-AllrightsreservedSTMicroelectronicsGROUPOFCOMPANIES Australia-Belgium-Brazil-Canada-China-CzechRepublic-Finland-France-Germany-HongKong-India-Israel-Italy-JapanMalaysia-Malta-o-Singapore-Spain-Sweden-Switzerland-UnitedKingdom-UnitedStates 13/13