ISL2111
100V,3A/4APeak,HighFrequencyHalf-BridgeDrivers
FN6295Rev.8.00April18,2022
TheISL2110,ISL2111are100V,highfrequency,half-bridgeN-ChannelpowerMOSFETdriverICs.TheyarebasedonthepopularHIP2100,HIP2101half-bridgedrivers,butofferseveralperformanceimprovements.Peakoutputpull-up/pull-downcurrenthasbeenincreasedto3A/4A,whichsignificantlyreducesswitchingpowerlossesandeliminatestheneedforexternaltotem-polebuffersinmanyapplications.Also,thelowendoftheVDDoperationalsupplyrangehasbeenextendedto8VDC.TheISL2110hasadditionalinputhysteresisforsuperioroperationinnoisyenvironmentsandtheinputsoftheISL2111,likethoseoftheISL2110,cannowsafelyswingtotheVDDsupplyrail.
Applications
•half-bridgeDC/DCconverters
•full-bridgeDC/DCconverters
•Two-switchforwardconverters
•Active-clampforwardconverters
•Class-Daudioamplifiers
Features
•DrivesN-ChannelMOSFEThalf-bridge•SOIC,DFN,andTDFNpackageoptions•SOIC,DFN,andTDFNpliantwith100V
conductorspacingguidelinesperIPC-2221•Pb-free(pliant)•Bootstrapsupplymaxvoltageto114VDC•On-chip1Wbootstrapdiode•Fastpropagationtimesformulti-MHzcircuits•Drives1nFloadwithtypicalrise/falltimesof9ns/7.5ns•patibleinputthresholds(ISL2110)•3.3V/patibleinputthresholds(ISL2111)•Independentinputsprovideflexibility•Nostart-upproblems•Outputsunaffectedbysupplyglitches,HSringingbelow
groundorHSslewingathighdv/dt•Lowpowerconsumption•Widesupplyvoltagerange(8Vto14V)•Supplyundervoltageprotection•1.6W/1Wtypicaloutputpull-up/pull-downresistance
+12V
HI
PWMCONTROLLER
LI
CONTROL
VDDHB
DRIVE
HO
HI
HS
DRIVE
LO
LO
ISL2110ISL2111
VSS
+100V
SECONDARYCIRCUIT
REFERENCEAND
ISOLATION
FIGURE1.APPLICATIONBLOCKDIAGRAM
FN6295Rev.8.00April18,2022
Page1of16©2022RenesasElectronics
ISL2110,ISL2111
FunctionalBlockDiagram
HB
VDD
UNDERVOLTAGE
LEVELSHIFT
HO
DRIVER
HS
HI
ISL2111
ISL2111
UNDERVOLTAGE
LIVSS
LODRIVER
EPAD(DFNPackageOnly)
*EPAD=ExposedPad.TheEPADiselectricallyisolatedfromallotherpins.Forbestthermalperformance,connecttheEPADtothePCBpowergroundplane.
FIGURE2.FUNCTIONALBLOCKDIAGRAM
FN6295Rev.8.00April18,2022
Page2of16
ISL2110,ISL2111
ApplicationDiagrams
+12V
PWM
+48V
ISL2110ISL2111
SECONDARYCIRCUIT
+12V
ISOLATION
FIGURE3.TWO-SWITCHFORWARDCONVERTER
+48V
SECONDARYCIRCUIT
PWM
ISL2110ISL2111
ISOLATION
FIGURE4.FORWARDCONVERTERWITHANACTIVE-CLAMP
FN6295Rev.8.00April18,2022
Page3of16
ISL2110,ISL2111
OrderingInformation
PARTNUMBER(Notes2,3)
PARTMARKING
PACKAGEDESCRIPTION(RoHSCOMPLIANT)
PKG.DWG.#
CARRIERTYPE(Notes1)
TEMPRANGE
ISL2110ABZISL2110ABZ-
T 2110ABZ 8LdSOIC M8.15 TubeReel,2.5k -40to+125°
C ISL2110AR4ZISL2110AR4Z-
T 2110AR4Z 12Ld4x4DFN L12.4x4A TubeReel,6k ISL2111ABZISL2111ABZ-
T 2111ABZ 8LdSOIC M8.15 TubeReel,2.5k ISL2111AR4ZISL2111AR4Z-
T 2111AR4Z 12Ld4x4DFN L12.4x4A TubeReel,6k ISL2111ARTZISL2111ARTZ-
T 2111ARTZ 10Ld4x4TDFN L10.4x4 TubeReel,6k ISL2111BR4ZISL2111BR4Z-
T 2111BR4Z 8Ld4x4DFN L8.4x4 TubeReel,6k NOTES:
1.SeeTB347fordetailsaboutreelspecifications.
2.ThesePb-freeplasticpackagedproductsemployspecialPb-freematerialsets,pounds/dieattachmaterials,and100%mattetinplateplusanneal(e3terminationfinish,whichispliantpatiblewithbothSnPbandPb-freesolderingoperations).Pb-freeproductsareMSLclassifiedatPb-freepeakreflowtemperaturesthatmeetorexceedthePb-freerequirementsofIPC/JEDECJSTD-020.
3.ForMoistureSensitivityLevel(MSL),pleaseseedeviceinformationpageforISL2110,ISL2111.FormoreinformationonMSL,seeTB363. PinConfigurations ISL2111ARTZ(10LD4x4TDFN) TOPVIEW ISL2110AR4Z,ISL2111AR4Z(12LD4x4DFN)TOPVIEW VDD1HB2HO3HS4NC5 10LO9VSS8LI7HI6NC VDD1NC2NC3HB4HO5HS6 EPAD* 12LO11VSS10NC9NC8LI7HI *EPAD=EXPOSEDPAD FN6295Rev.8.00April18,2022 Page4of16 ISL2110,ISL2111 PinConfigurations ISL2110ABZ,ISL2111ABZ(8LDSOIC)TOPVIEW VDD1HB2HO3HS4 8LO7VSS6LI5HI ISL2111BR4Z(8LD4x4DFN) TOPVIEW VDD1HB2HO3HS4 EPAD* 8LO7VSS6LI5HI *EPAD=EXPOSEDPAD PinDescriptions SYMBOL DESCRIPTION VDD Positivesupplytolowergatedriver.BypassthispintoVSS. HB High-sidebootstrapsupply.Externalbootstrapcapacitorisrequired.Connectpositivesideofbootstrapcapacitortothispin.Bootstrap diodeison-chip. HO High-sideoutput.Connecttogateofhigh-sidepowerMOSFET. HS High-sidesourceconnection.Connecttosourceofhigh-sidepowerMOSFET.Connectnegativesideofbootstrapcapacitortothispin. HI High-sideinput LI Low-sideinput VSS Chipnegativesupply,whichwillgenerallybeground. LO Low-sideoutput.Connecttogateoflow-sidepowerMOSFET. NC Noconnect EPAD Exposedpad.Connecttogroundorfloat.TheEPADiselectricallyisolatedfromallotherpins. FN6295Rev.8.00April18,2022 Page5of16 ISL2110,ISL2111 AbsoluteMaximumRatings SupplyVoltage,VDD,VHB-VHS(Notes4,5)...............0.3Vto18VLIandHIVoltages(Note5).......................-0.3VtoVDD+0.3VVoltageonLO(Note5)...........................-0.3VtoVDD+0.3VVoltageonHOrelativetoHS(RepetitiveTransient<100ns).........-2VVoltageonLOrelativetoGND(RepetitiveTransient<100ns)........-2VVoltageonHO(Note5)......................VHS-0.3VtoVHB+0.3VVoltageonHS(Continuous)(Note5).....................-1Vto110VVoltageonHB(Note5)......................................118VAverageCurrentinVDDtoHBDiode.........................100mA MaximummendedOperatingConditions SupplyVoltage,VDD.....................................8Vto14VVoltageonHS........................................-1Vto100VVoltageonHS.............(RepetitiveTransient<100ns)-5Vto105VVoltageonHB...........VHS+7VtoVHS+14VandVDD-1VtoVDD+100VHSSlewRate............................................<50V/ns ThermalInformation ThermalResistance(Typical) θJA(°C/W)θJC(°C/W) 8LdSOIC(Notes6,9)................. 95 46 10LdTDFN(Notes7,8)............... 40 2.5 12LdDFN(Notes7,8)................ 39 2.5 8LdDFN(Notes7,8).................. 40 4.0 MaxPowerDissipationat+25°CinFreeAir 8LdSOIC(Notes6,9).......................................1.3W 10LdTDFN(Notes7,8).....................................3.0W 12LdDFN(Notes7,8)......................................3.1W 8LdDFN(Notes7,8)......................................3.1W StorageTemperatureRange........................-65°Cto+150°
C JunctionTemperatureRange.......................-55°Cto+150°
C Pb-FreeReflowProfile..................................seeTB493 CAUTION:Donotoperateatornearthemaximumratingslistedforextendedperiodsoftime.Exposuretosuchconditionsmayadverselyimpactproductreliabilityandresultinfailuresnotcoveredbywarranty. NOTES:
4.TheISL2110andISL2111arecapableofderatedoperationatsupplyvoltagesexceeding14V.Figure24showsthehigh-sidevoltagederatingcurve forthismodeofoperation.5.AllvoltagesreferencedtoVSSunlessotherwisespecified.6.θJAismeasuredwithponentmountedonahigh-effectivethermalconductivitytestboardinfreeair.SeeTechBriefTB379fordetails.7.θJAismeasuredinfreeairwithponentmountedonahigh-effectivethermalconductivitytestboardwith“directattach”features.SeeTech BriefTB379.8.ForθJC,the“casetemp”locationisthecenteroftheexposedmetalpadonthepackageunderside.9.ForθJC,the“casetemp”locationistakenatthecenter. ElectricalSpecificationsVDD=VHB=12V,VSS=VHS=0V,noloadonLOorHO,unlessotherwisespecified. PARAMETERS SYMBOL TESTCONDITIONS TJ=+25°
C MIN MAX (Note10)TYP(Note10) TJ=-40°Cto+125°
C MIN MAX (Note10)(Note10) UNIT SUPPLYCURRENTS VDDQuiescentCurrentVDDQuiescentCurrentVDDOperatingCurrentVDDOperatingCurrentTotalHBQuiescentCurrentTotalHBOperatingCurrentHBtoVSSCurrent,QuiescentHBtoVSSCurrent,OperatingINPUTPINS IDDIDDIDDOIDDOIHBIHBOIHBSIHBSO ISL2110;LI=HI=0VISL2111;LI=HI=0VISL2110;f=500kHzISL2111;f=500kHzLI=HI=0Vf=500kHzLI=HI=0V;VHB=VHS=114Vf=500kHz;VHB=VHS=114V - 0.100.25 - - 0.300.45 - - 3.4 5.0 - - 3.5 5.0 - - 0.100.15 - - 3.4 5.0 - - 0.051.50 - - 1.2 - - 0.30 mA 0.55 mA 5.5 mA 5.5 mA 0.20 mA 5.5 mA 10 µ
A - mA Low
LevelInputVoltageThresholdLowLevelInputVoltageThresholdHighLevelInputVoltageThresholdHighLevelInputVoltageThresholdInputVoltageHysteresis VILVILVIHVIHVIHYS ISL2110ISL2111ISL2110ISL2111ISL2110 3.7 4.4 - 3.5 1.4 1.8 - 1.2 - 6.6 7.4 - - 1.8 2.2 - - 2.2 - - -
V -
V 7.6
V 2.4
V -
V FN6295
Rev.8.00April18,2022 Page6of16 ISL2110,ISL2111 ElectricalSpecificationsVDD=VHB=12V,VSS=VHS=0V,noloadonLOorHO,unlessotherwisespecified.(Continued) PARAMETERS SYMBOL TESTCONDITIONS TJ=+25°
C MIN MAX (Note10)TYP(Note10) TJ=-40°Cto+125°
C MIN MAX (Note10)(Note10) UNIT InputPull-DownResistance RI UNDERVOLTAGEPROTECTION - 210 - 100 500 kΩ VDDRisingThresholdVDDThresholdHysteresisHBRisingThresholdHBThresholdHysteresisBOOTSTRAPDIODE VDDRVDDHVHBRVHBH 6.1 6.6 7.1 5.8 - 0.6 - - 5.5 6.1 6.8 5.0 - 0.6 - - 7.4
V -
V 7.1
V -
V Low
CurrentForwardVoltageHighCurrentForwardVoltageDynamicResistanceLOGATEDRIVER VDLIVDD-HB=100µAVDHIVDD-HB=100mARDIVDD-HB=100mA - 0.5 0.6 - - 0.7 0.9 - - 0.7
1 - 0.7
V 1
V 1.5 Ω LowLevelOutputVoltageHighLevelOutputVoltagePeakPull-UpCurrentPeakPull-DownCurrentHOGATEDRIVER VOLLVOHLIOHLIOLL ILO=100mAILO=-100mA,VOHL=VDD-VLOVLO=0VVLO=12V - 0.1 0.18 - - 0.160.23 - -
3 - - -
4 - - 0.25
V 0.3
V -
A -
A LowLevelOutputVoltageHighLevelOutputVoltagePeakPull-UpCurrentPeakPull-DownCurrent VOLHVOHHIOHHIOLH IHO=100mAIHO=-100mA,VOHH=VHB-VHOVHO=0VVHO=12V - 0.1 0.18 - - 0.160.23 - -
3 - - -
4 - - 0.25
V 0.3
V -
A -
A SwitchingSpecificationsVDD=VHB=12V,VSS=VHS=0V,NoLoadonLOorHO,unlessotherwisespecified. PARAMETERS SYMBOL TESTCONDITIONS TJ=+25°
C MIN MAX (Note10)TYP(Note10) TJ=-40°Cto+125°
C MIN(Note10) MAX(Note10) UNIT LowerTurn-OffPropagationDelay(LIFallingtoLOFalling) tLPHL - 32 50 - 60 ns UpperTurn-OffPropagationDelay(HIFallingtoHOFalling)tHPHL - 32 50 - 60 ns LowerTurn-OnPropagationDelay(LIRisingtoLORising) tLPLH - 39 50 - 60 ns UpperTurn-OnPropagationDelay(HIRisingtoHORising)tHPLH - 38 50 - 60 ns DelayMatching:UpperTurn-OfftoLowerTurn-On tMON
1 8 - - 16 ns DelayMatching:LowerTurn-OfftoUpperTurn-On tMOFF
1 6 - - 16 ns EitherOutputRiseTime(10%to90%) tRCCL=1nF -
9 - - - ns EitherOutputFallTime(90%to10%) tFCCL=1nF - 7.5 - - - ns EitherOutputRiseTime(3Vto9V) tRCL=0.1µ
F - 0.3 0.4 - 0.5 µs EitherOutputFallTime(9Vto3V) tFCL=0.1µ
F - 0.19 0.3 - 0.4 µs MinimumInputPulseWidththatChangestheOutput tPW - - - - 50 ns BootstrapDiodeTurn-OnorTurn-OffTime tBS - 10 - - - ns NOTE: 10.ParameterswithMINand/orMAXlimitsare100%testedat+25°C,unlessotherwisespecified.Temperaturelimitsestablishedbycharacterizationandarenotproductiontested. FN6295Rev.8.00April18,2022 Page7of16 ISL2110,ISL2111 TimingDiagrams HI,LIHO,LO tHPLH,tLPLH tHPHL,tLPHL FIGURE5.PROPAGATIONDELAYS LI HI LOtMON HO tMOFF FIGURE6.DELAYMATCHING FN6295Rev.8.00April18,2022 Page8of16 ISL2110,ISL2111 TypicalPerformanceCurves 10.0 T=-40°CT=+25°C1.0 IDDO(mA) 0.110k T=+125°CT=+150°C 100kFREQUENCY(Hz) 1.103k FIGURE7.ISL2110IDDOPERATINGCURRENTvsFREQUENCY IHBO(mA) 10.0 1.0 T=+25°
C T=+150°CT=-40°
C 0.1 T=+125°
C 0.0110k 100kFREQUENCY(Hz) 1.103k FIGURE9.IHBOPERATINGCURRENTvsFREQUENCY VOHL,VOHH(mV) 300 250 VDD=VHB=14V 200 150 100 50-50 VDD=VHB=12VVDD=VHB=8V
0 50 100 150 TEMPERATURE(°C) FIGURE11.HIGHLEVELOUTPUTVOLTAGEvsTEMPERATURE VOLL,VOLH(mV) IDDO(mA) 10.0T=-40°
C T=+25°C1.0 T=+150°CT=+125°
C 0.110k 100kFREQUENCY(Hz) 1.103k FIGURE8.ISL2111IDDOPERATINGCURRENTvsFREQUENCY IHBSO(mA) 10.0 1.0T=+25°C 0.1 T=-40°
C T=+150°
C 0.0110k T=+125°
C 100kFREQUENCY(Hz) 1.103k FIGURE10.IHBSOPERATINGCURRENTvsFREQUENCY 200 VDD=VHB=14V150 10050-50 VDD=VHB=8V VDD=VHB=12V
0 50 100 150 TEMPERATURE(°C) FIGURE12.LOWLEVELOUTPUTVOLTAGEvsTEMPERATURE FN6295Rev.8.00April18,2022 Page9of16 ISL2110,ISL2111 TypicalPerformanceCurves(Continued) VDDR,VHBR(V) 6.76.56.36.15.95.75.55.3 -50 VHBR VDDR
0 50 100 150 TEMPERATURE(°C) FIGURE13.UNDERVOLTAGELOCKOUTTHRESHOLDvsTEMPERATURE VDDH,VHBH(V) 0.70 0.65 0.60 VHBH 0.55 0.50 0.45 VDDH 0.40-50
0 50 100 150 TEMPERATURE(°C) FIGURE14.UNDERVOLTAGELOCKOUTHYSTERESISvsTEMPERATURE 55 tLPLH,tLPHL,tHPLH,tHPHL(ns) 50 tLPLH 45 40 tHPLH 353025 -50 tHPHL tLPHL
0 50 100 150 TEMPERATURE(°C) FIGURE15.ISL2110PROPAGATIONDELAYSvsTEMPERATURE 8.0 7.5 7.0 tMON 6.5 6.05.5tMOFF 5.0 4.5 4.0-50
0 50 100 150 TEMPERATURE(°C) FIGURE17.ISL2110DELAYMATCHINGvsTEMPERATURE tMON,tMOFF(ns) 55 tLPLH,tLPHL,tHPLH,tHPHL(ns) 50 tLPLH 45 40 tHPLH 35 tLPHL 3025 -50 tHPHL
0 50 100 150 TEMPERATURE(°C) FIGURE16.ISL2111PROPAGATIONDELAYSvsTEMPERATURE 10.09.5 9.08.58.07.5 7.06.56.05.55.0 4.54.0 -50 tMON tMOFF
0 50 100 150 TEMPERATURE(°C) FIGURE18.ISL2111DELAYMATCHINGvsTEMPERATURE tMON,tMOFF(ns) FN6295Rev.8.00April18,2022 Page10of16 ISL2110,ISL2111 TypicalPerformanceCurves(Continued) IOHL,IOHH(A) 3.5 3.0 2.5 2.0 1.5 1.0 0.5 00
2 4
6 8 10 12 VLO,VHO(V) FIGURE19.PEAKPULL-UPCURRENTvsOUTPUTVOLTAGE IOHL,IOHH(A) 4.5 4.0 3.5 3.0 2.5 2.0 1.5 1.0 0.5 00
2 4
6 8 10 12 VLO,VHO(V) FIGURE20.PEAKPULL-DOWNCURRENTvsOUTPUTVOLTAGE IDD,IHB(µA) 120 110 IDD 100 90 80 70 60 50 40 IHB 30 20 10 005101520 VDD,VHB(V) FIGURE21.ISL2110QUIESCENTCURRENTvsVOLTAGE IDD,IHB(µA) 320300280260240220200180160140120100 80604020 00 IDD IHB
5 10 15 20 VDD,VHB(V) FIGURE22.ISL2111QUIESCENTCURRENTvsVOLTAGE FORWARDCURRENT(A) 1.00 0.10 0.01 1.10-
3 1.10-
4 1.10-
5 1.10-
6 0.3 0.4 0.5 0.6 0.7 0.8 FORWARD
VOLTAGE(V) FIGURE23.BOOTSTRAPDIODEI-VCHARACTERISTICS VHSTOVSSVOLTAGE(V) 120 100 80 60 40 20 012 13 14 15 16 VDDTOVSSVOLTAGE(V) FIGURE24.VHSVOLTAGEvsVDDVOLTAGE FN6295Rev.8.00April18,2022 Page11of16 ISL2110,ISL2111 RevisionHistoryTherevisionhistoryprovidedisforinformationalpurposesonlyandisbelievedtobeurate,butnotwarranted. Pleasevisitourwebsitetomakesureyouhavethelatestrevision. DATE REVISION CHANGE April18,2022 FN6295.8 UpdatedtheOrderinginformationtableplywiththenewstandard,updatednotes.InAbsoluteMaximumRatings,addedVoltageonHOrelativetoHSandVoltageonLOrelativetoGND.UpdatedPODM8.15tothelatestversion:“Addedthecoplanarityspecintothedrawing.”RemovedRelatedLiteratureandAboutIntersilsections. Mar16,2017 FN6295.7 CorrectedthebrandingofFGISL2111BR4Zintheorderinformationtablefrom"2111BR4A"to"2111BR4Z".AddedRevisionHistorytableandAboutIntersilinformation. UpdatedL10.4x4PackageOutlineDrawingfromRev1toRev2.ChangesinceRev1is:“Tiebarnoteupdatefrom‘Tiebarshown(ifpresent)isanon-functionalfeature’to‘Tiebarshown(ifpresent)isanon-functionalfeatureandmaybelocatedonanyofthe4sides(orends)’”. UpdatedL12.4x4APackageOutlineDrawingfromRev1toRev3.ChangessinceRev1are:“Tiebarnoteupdatefrom‘Tiebarshown(ifpresent)isanon-functionalfeature’to‘Tiebarshown(ifpresent)isanon-functionalfeatureandmaybelocatedonanyofthe4sides(orends)’”;“BottomViewchangedfrom‘3.2REF’TO‘2.5REF’";“TypicalmendedLandPatternchangedfrom‘3.80’to‘3.75’";“UpdatedtonewPODformatbyremovingtablelistingdimensionsandmovingdimensionsontodrawing”,and“Addedtypicalmendedlandpattern”. UpdatedM8.15PackageOutlineDrawingfromRev3toRev4.ChangesinceRev3is:“ChangedNote1from1982to1994“. UpdatedL8.4x4PackageOutlineDrawingfromRev0toRev1.ChangesinceRev0is:“Tiebarnoteupdatefrom‘Tiebarshown(ifpresent)isanon-functionalfeature’to‘Tiebarshown(ifpresent)isanon-functionalfeatureandmaybelocatedonanyofthe4sides(orends)’”. FN6295Rev.8.00April18,2022 Page12of16 ISL2110,ISL2111 PackageOutlineDrawing L10.4x4 10LEADTHINDUALFLATNO-LEADPLASTICPACKAGE Rev2,4/15
A 4.00
B PIN#1INDEXAREA6 6PIN1INDEXAREA Forthemostrecentpackageoutlinedrawing,seeL10.4x4. 3.2REF 8X0.80BSC
1 5 10X0.40 4.00 2.60 (3.80) TOPVIEW(3.00) 0.15(4X) (10X0.60)(2.60) 10 0.75 3.00BOTTOMVIEW SIDEVIEW 60.10MCAB0.05MC 410X0.30 SEEDETAIL"X" 0.10CBASEPLANEC SEATINGPLANE0.08C 0.2REFC (8X0.8) (10X0.30) TYPICALRECOMMENDEDLANDPATTERN 0.00MIN.0.05MAX.DETAIL"X" NOTES:
1.Dimensionsareinmillimeters.Dimensionsin()forReferenceOnly.
2.DimensioningandtolerancingconformtoAMSEY14.5m-1994.
3.Unlessotherwisespecified,tolerance:Decimal±0.05
4.Dimensionbappliestothemetallizedterminalandismeasuredbetween0.15mmand0.30mmfromtheterminaltip.
5.Tiebarshown(ifpresent)isanon-functionalfeatureandmaybelocatedonanyofthe4sides(orends).
6.Theconfigurationofthepin#1identifierisoptional,butmustbelocatedwithinthezoneindicated.Thepin#1identifiermaybeeitheramoldormarkfeature. FN6295Rev.8.00April18,2022 Page13of16 ISL2110,ISL2111 PackageOutlineDrawing L12.4x4A 12LEADDUALFLATNO-LEADPLASTICPACKAGE Rev3,3/15
A 4.00
B PIN#1INDEXAREA6 6PIN1INDEXAREA Forthemostrecentpackageoutlinedrawing,seeL12.4x4A. 2.5REF10X0.50BSC
1 6 12X0.45 4.00 1.58 (3.75) TOPVIEW(2.80) 0.15(4X) (12X0.65)(1.58) 121.00MAX 2.80BOTTOMVIEW SIDEVIEW 70.10MCAB0.05MC 412X0.25 SEEDETAIL"X"0.10C BASEPLANECSEATINGPLANE0.08C 0.2REFC (10X0.5) (12X0.25) TYPICALRECOMMENDEDLANDPATTERN 0.00MIN.0.05MAX.DETAIL"X" NOTES:
1.Dimensionsareinmillimeters.Dimensionsin()forReferenceOnly.
2.DimensioningandtolerancingconformtoAMSEY14.5m-1994.
3.Unlessotherwisespecified,tolerance:Decimal±0.05
4.Leadwidthappliestothemetallizedterminalandismeasuredbetween0.15mmand0.30mmfromtheterminaltip.
5.Tiebarshown(ifpresent)isanon-functionalfeatureandmaybelocatedonanyofthe4sides(orends).
6.Theconfigurationofthepin#1identifierisoptional,butmustbelocatedwithinthezoneindicated.Thepin#1identifiermaybeeitheramoldormarkfeature. FN6295Rev.8.00April18,2022 Page14of16 ISL2110,ISL2111 PackageOutlineDrawing M8.15 8LEADNARROWBODYSMALLOUTLINEPLASTICPACKAGERev5,4/21 Forthemostrecentpackageoutlinedrawing,seeM8.15. FN6295Rev.8.00April18,2022 Page15of16 ISL2110,ISL2111 PackageOutlineDrawing L8.4x4 8LEADDUALFLATNO-LEADPLASTICPACKAGE Rev1,03/15
A 4.00
B PIN#1INDEXAREA6 6PIN1INDEXAREA 4.00 Forthemostrecentpackageoutlinedrawing,seeL8.4x4. 2.4REF 6X0.80BSC
1 4 8X0.40±0.10 2.50±0.10 (3.80) TOPVIEW(3.45) 0.15(4X) (8X0.60)(2.50)
8 5 3.45±0.10BOTTOMVIEW 0.9±0.10 SIDEVIEW 0.10MCAB0.05MC48X0.30 SEEDETAIL"X" 0.10CBASEPLANEC SEATINGPLANE0.08C 0.2REFC (6X0.8) (8X0.30) TYPICALRECOMMENDEDLANDPATTERN 0.00MIN.0.05MAX. DETAIL"X" NOTES:
1.Dimensionsareinmillimeters.Dimensionsin()forReferenceOnly.
2.DimensioningandtolerancingconformtoASMEY14.5m-1994.3.Unlessotherwisespecified,tolerance:Decimal±0.054.Dimensionappliestothemetallizedterminalandismeasured between0.15mmand0.30mmfromtheterminaltip.5.Tiebarshown(ifpresent)isanon-functionalfeatureandmay belocatedonanyofthe4sides(orends).6.Theconfigurationofthepin#1identifierisoptional,butmustbe locatedwithinthezoneindicated.Thepin#1identifiermaybeeitheramoldormarkfeature. FN6295Rev.8.00April18,2022 Page16of16 IMPORTANTNOTICEANDDISCLAIMER RENESASELECTRONICSCORPORATIONANDITSSUBSIDIARIES(“RENESAS”)PROVIDESTECHNICALSPECIFICATIONSANDRELIABILITYDATA(INCLUDINGDATASHEETS),DESIGNRESOURCES(INCLUDINGREFERENCEDESIGNS),APPLICATIONOROTHERDESIGNADVICE,WEBTOOLS,SAFETYINFORMATION,ANDOTHERRESOURCES“ASIS”ANDWITHALLFAULTS,ANDDISCLAIMSALLWARRANTIES,EXPRESSORIMPLIED,INCLUDING,WITHOUTLIMITATION,ANYIMPLIEDWARRANTIESOFMERCHANTABILITY,FITNESSFORAPARTICULARPURPOSE,ORNON-INFRINGEMENTOFTHIRDPARTYINTELLECTUALPROPERTYRIGHTS. TheseresourcesareintendedfordevelopersskilledintheartdesigningwithRenesasproducts.Youaresolelyresponsiblefor(1)selectingtheappropriateproductsforyourapplication,(2)designing,validating,andtestingyourapplication,and(3)ensuringyourapplicationmeetsapplicablestandards,andanyothersafety,security,orotherrequirements.Theseresourcesaresubjecttochangewithoutnotice.RenesasgrantsyoupermissiontousetheseresourcesonlyfordevelopmentofanapplicationthatusesRenesasproducts.Otherreproductionoruseoftheseresourcesisstrictlyprohibited.NolicenseisgrantedtoanyotherRenesasintellectualpropertyortoanythirdpartyintellectualproperty.Renesasdisclaimsresponsibilityfor,andyouwillfullyindemnifyRenesasanditsrepresentativesagainst,anyclaims,damages,costs,losses,orliabilitiesarisingoutofyouruseoftheseresources.Renesas'productsareprovidedonlysubjecttoRenesas'TermsandConditionsofSaleorotherapplicabletermsagreedtoinwriting.NouseofanyRenesasresourcesexpandsorotherwisealtersanyapplicablewarrantiesorwarrantydisclaimersfortheseproducts. (Rev.1.0Mar2020) CorporateHeadquarters TOYOSUFORESIA,3-2-24Toyosu,Koto-ku,Tokyo135-0061,Japan Trademarks RenesasandtheRenesaslogoaretrademarksofRenesasElectronicsCorporation.Alltrademarksandregisteredtrademarksarethepropertyoftheirrespectiveowners. ContactInformation Forfurtherinformationonaproduct,technology,themostup-to-dateversionofadocument,oryournearestsalesoffice,pleasevisit:/contact/
T 2110ABZ 8LdSOIC M8.15 TubeReel,2.5k -40to+125°
C ISL2110AR4ZISL2110AR4Z-
T 2110AR4Z 12Ld4x4DFN L12.4x4A TubeReel,6k ISL2111ABZISL2111ABZ-
T 2111ABZ 8LdSOIC M8.15 TubeReel,2.5k ISL2111AR4ZISL2111AR4Z-
T 2111AR4Z 12Ld4x4DFN L12.4x4A TubeReel,6k ISL2111ARTZISL2111ARTZ-
T 2111ARTZ 10Ld4x4TDFN L10.4x4 TubeReel,6k ISL2111BR4ZISL2111BR4Z-
T 2111BR4Z 8Ld4x4DFN L8.4x4 TubeReel,6k NOTES:
1.SeeTB347fordetailsaboutreelspecifications.
2.ThesePb-freeplasticpackagedproductsemployspecialPb-freematerialsets,pounds/dieattachmaterials,and100%mattetinplateplusanneal(e3terminationfinish,whichispliantpatiblewithbothSnPbandPb-freesolderingoperations).Pb-freeproductsareMSLclassifiedatPb-freepeakreflowtemperaturesthatmeetorexceedthePb-freerequirementsofIPC/JEDECJSTD-020.
3.ForMoistureSensitivityLevel(MSL),pleaseseedeviceinformationpageforISL2110,ISL2111.FormoreinformationonMSL,seeTB363. PinConfigurations ISL2111ARTZ(10LD4x4TDFN) TOPVIEW ISL2110AR4Z,ISL2111AR4Z(12LD4x4DFN)TOPVIEW VDD1HB2HO3HS4NC5 10LO9VSS8LI7HI6NC VDD1NC2NC3HB4HO5HS6 EPAD* 12LO11VSS10NC9NC8LI7HI *EPAD=EXPOSEDPAD FN6295Rev.8.00April18,2022 Page4of16 ISL2110,ISL2111 PinConfigurations ISL2110ABZ,ISL2111ABZ(8LDSOIC)TOPVIEW VDD1HB2HO3HS4 8LO7VSS6LI5HI ISL2111BR4Z(8LD4x4DFN) TOPVIEW VDD1HB2HO3HS4 EPAD* 8LO7VSS6LI5HI *EPAD=EXPOSEDPAD PinDescriptions SYMBOL DESCRIPTION VDD Positivesupplytolowergatedriver.BypassthispintoVSS. HB High-sidebootstrapsupply.Externalbootstrapcapacitorisrequired.Connectpositivesideofbootstrapcapacitortothispin.Bootstrap diodeison-chip. HO High-sideoutput.Connecttogateofhigh-sidepowerMOSFET. HS High-sidesourceconnection.Connecttosourceofhigh-sidepowerMOSFET.Connectnegativesideofbootstrapcapacitortothispin. HI High-sideinput LI Low-sideinput VSS Chipnegativesupply,whichwillgenerallybeground. LO Low-sideoutput.Connecttogateoflow-sidepowerMOSFET. NC Noconnect EPAD Exposedpad.Connecttogroundorfloat.TheEPADiselectricallyisolatedfromallotherpins. FN6295Rev.8.00April18,2022 Page5of16 ISL2110,ISL2111 AbsoluteMaximumRatings SupplyVoltage,VDD,VHB-VHS(Notes4,5)...............0.3Vto18VLIandHIVoltages(Note5).......................-0.3VtoVDD+0.3VVoltageonLO(Note5)...........................-0.3VtoVDD+0.3VVoltageonHOrelativetoHS(RepetitiveTransient<100ns).........-2VVoltageonLOrelativetoGND(RepetitiveTransient<100ns)........-2VVoltageonHO(Note5)......................VHS-0.3VtoVHB+0.3VVoltageonHS(Continuous)(Note5).....................-1Vto110VVoltageonHB(Note5)......................................118VAverageCurrentinVDDtoHBDiode.........................100mA MaximummendedOperatingConditions SupplyVoltage,VDD.....................................8Vto14VVoltageonHS........................................-1Vto100VVoltageonHS.............(RepetitiveTransient<100ns)-5Vto105VVoltageonHB...........VHS+7VtoVHS+14VandVDD-1VtoVDD+100VHSSlewRate............................................<50V/ns ThermalInformation ThermalResistance(Typical) θJA(°C/W)θJC(°C/W) 8LdSOIC(Notes6,9)................. 95 46 10LdTDFN(Notes7,8)............... 40 2.5 12LdDFN(Notes7,8)................ 39 2.5 8LdDFN(Notes7,8).................. 40 4.0 MaxPowerDissipationat+25°CinFreeAir 8LdSOIC(Notes6,9).......................................1.3W 10LdTDFN(Notes7,8).....................................3.0W 12LdDFN(Notes7,8)......................................3.1W 8LdDFN(Notes7,8)......................................3.1W StorageTemperatureRange........................-65°Cto+150°
C JunctionTemperatureRange.......................-55°Cto+150°
C Pb-FreeReflowProfile..................................seeTB493 CAUTION:Donotoperateatornearthemaximumratingslistedforextendedperiodsoftime.Exposuretosuchconditionsmayadverselyimpactproductreliabilityandresultinfailuresnotcoveredbywarranty. NOTES:
4.TheISL2110andISL2111arecapableofderatedoperationatsupplyvoltagesexceeding14V.Figure24showsthehigh-sidevoltagederatingcurve forthismodeofoperation.5.AllvoltagesreferencedtoVSSunlessotherwisespecified.6.θJAismeasuredwithponentmountedonahigh-effectivethermalconductivitytestboardinfreeair.SeeTechBriefTB379fordetails.7.θJAismeasuredinfreeairwithponentmountedonahigh-effectivethermalconductivitytestboardwith“directattach”features.SeeTech BriefTB379.8.ForθJC,the“casetemp”locationisthecenteroftheexposedmetalpadonthepackageunderside.9.ForθJC,the“casetemp”locationistakenatthecenter. ElectricalSpecificationsVDD=VHB=12V,VSS=VHS=0V,noloadonLOorHO,unlessotherwisespecified. PARAMETERS SYMBOL TESTCONDITIONS TJ=+25°
C MIN MAX (Note10)TYP(Note10) TJ=-40°Cto+125°
C MIN MAX (Note10)(Note10) UNIT SUPPLYCURRENTS VDDQuiescentCurrentVDDQuiescentCurrentVDDOperatingCurrentVDDOperatingCurrentTotalHBQuiescentCurrentTotalHBOperatingCurrentHBtoVSSCurrent,QuiescentHBtoVSSCurrent,OperatingINPUTPINS IDDIDDIDDOIDDOIHBIHBOIHBSIHBSO ISL2110;LI=HI=0VISL2111;LI=HI=0VISL2110;f=500kHzISL2111;f=500kHzLI=HI=0Vf=500kHzLI=HI=0V;VHB=VHS=114Vf=500kHz;VHB=VHS=114V - 0.100.25 - - 0.300.45 - - 3.4 5.0 - - 3.5 5.0 - - 0.100.15 - - 3.4 5.0 - - 0.051.50 - - 1.2 - - 0.30 mA 0.55 mA 5.5 mA 5.5 mA 0.20 mA 5.5 mA 10 µ
A - mA Low
LevelInputVoltageThresholdLowLevelInputVoltageThresholdHighLevelInputVoltageThresholdHighLevelInputVoltageThresholdInputVoltageHysteresis VILVILVIHVIHVIHYS ISL2110ISL2111ISL2110ISL2111ISL2110 3.7 4.4 - 3.5 1.4 1.8 - 1.2 - 6.6 7.4 - - 1.8 2.2 - - 2.2 - - -
V -
V 7.6
V 2.4
V -
V FN6295
Rev.8.00April18,2022 Page6of16 ISL2110,ISL2111 ElectricalSpecificationsVDD=VHB=12V,VSS=VHS=0V,noloadonLOorHO,unlessotherwisespecified.(Continued) PARAMETERS SYMBOL TESTCONDITIONS TJ=+25°
C MIN MAX (Note10)TYP(Note10) TJ=-40°Cto+125°
C MIN MAX (Note10)(Note10) UNIT InputPull-DownResistance RI UNDERVOLTAGEPROTECTION - 210 - 100 500 kΩ VDDRisingThresholdVDDThresholdHysteresisHBRisingThresholdHBThresholdHysteresisBOOTSTRAPDIODE VDDRVDDHVHBRVHBH 6.1 6.6 7.1 5.8 - 0.6 - - 5.5 6.1 6.8 5.0 - 0.6 - - 7.4
V -
V 7.1
V -
V Low
CurrentForwardVoltageHighCurrentForwardVoltageDynamicResistanceLOGATEDRIVER VDLIVDD-HB=100µAVDHIVDD-HB=100mARDIVDD-HB=100mA - 0.5 0.6 - - 0.7 0.9 - - 0.7
1 - 0.7
V 1
V 1.5 Ω LowLevelOutputVoltageHighLevelOutputVoltagePeakPull-UpCurrentPeakPull-DownCurrentHOGATEDRIVER VOLLVOHLIOHLIOLL ILO=100mAILO=-100mA,VOHL=VDD-VLOVLO=0VVLO=12V - 0.1 0.18 - - 0.160.23 - -
3 - - -
4 - - 0.25
V 0.3
V -
A -
A LowLevelOutputVoltageHighLevelOutputVoltagePeakPull-UpCurrentPeakPull-DownCurrent VOLHVOHHIOHHIOLH IHO=100mAIHO=-100mA,VOHH=VHB-VHOVHO=0VVHO=12V - 0.1 0.18 - - 0.160.23 - -
3 - - -
4 - - 0.25
V 0.3
V -
A -
A SwitchingSpecificationsVDD=VHB=12V,VSS=VHS=0V,NoLoadonLOorHO,unlessotherwisespecified. PARAMETERS SYMBOL TESTCONDITIONS TJ=+25°
C MIN MAX (Note10)TYP(Note10) TJ=-40°Cto+125°
C MIN(Note10) MAX(Note10) UNIT LowerTurn-OffPropagationDelay(LIFallingtoLOFalling) tLPHL - 32 50 - 60 ns UpperTurn-OffPropagationDelay(HIFallingtoHOFalling)tHPHL - 32 50 - 60 ns LowerTurn-OnPropagationDelay(LIRisingtoLORising) tLPLH - 39 50 - 60 ns UpperTurn-OnPropagationDelay(HIRisingtoHORising)tHPLH - 38 50 - 60 ns DelayMatching:UpperTurn-OfftoLowerTurn-On tMON
1 8 - - 16 ns DelayMatching:LowerTurn-OfftoUpperTurn-On tMOFF
1 6 - - 16 ns EitherOutputRiseTime(10%to90%) tRCCL=1nF -
9 - - - ns EitherOutputFallTime(90%to10%) tFCCL=1nF - 7.5 - - - ns EitherOutputRiseTime(3Vto9V) tRCL=0.1µ
F - 0.3 0.4 - 0.5 µs EitherOutputFallTime(9Vto3V) tFCL=0.1µ
F - 0.19 0.3 - 0.4 µs MinimumInputPulseWidththatChangestheOutput tPW - - - - 50 ns BootstrapDiodeTurn-OnorTurn-OffTime tBS - 10 - - - ns NOTE: 10.ParameterswithMINand/orMAXlimitsare100%testedat+25°C,unlessotherwisespecified.Temperaturelimitsestablishedbycharacterizationandarenotproductiontested. FN6295Rev.8.00April18,2022 Page7of16 ISL2110,ISL2111 TimingDiagrams HI,LIHO,LO tHPLH,tLPLH tHPHL,tLPHL FIGURE5.PROPAGATIONDELAYS LI HI LOtMON HO tMOFF FIGURE6.DELAYMATCHING FN6295Rev.8.00April18,2022 Page8of16 ISL2110,ISL2111 TypicalPerformanceCurves 10.0 T=-40°CT=+25°C1.0 IDDO(mA) 0.110k T=+125°CT=+150°C 100kFREQUENCY(Hz) 1.103k FIGURE7.ISL2110IDDOPERATINGCURRENTvsFREQUENCY IHBO(mA) 10.0 1.0 T=+25°
C T=+150°CT=-40°
C 0.1 T=+125°
C 0.0110k 100kFREQUENCY(Hz) 1.103k FIGURE9.IHBOPERATINGCURRENTvsFREQUENCY VOHL,VOHH(mV) 300 250 VDD=VHB=14V 200 150 100 50-50 VDD=VHB=12VVDD=VHB=8V
0 50 100 150 TEMPERATURE(°C) FIGURE11.HIGHLEVELOUTPUTVOLTAGEvsTEMPERATURE VOLL,VOLH(mV) IDDO(mA) 10.0T=-40°
C T=+25°C1.0 T=+150°CT=+125°
C 0.110k 100kFREQUENCY(Hz) 1.103k FIGURE8.ISL2111IDDOPERATINGCURRENTvsFREQUENCY IHBSO(mA) 10.0 1.0T=+25°C 0.1 T=-40°
C T=+150°
C 0.0110k T=+125°
C 100kFREQUENCY(Hz) 1.103k FIGURE10.IHBSOPERATINGCURRENTvsFREQUENCY 200 VDD=VHB=14V150 10050-50 VDD=VHB=8V VDD=VHB=12V
0 50 100 150 TEMPERATURE(°C) FIGURE12.LOWLEVELOUTPUTVOLTAGEvsTEMPERATURE FN6295Rev.8.00April18,2022 Page9of16 ISL2110,ISL2111 TypicalPerformanceCurves(Continued) VDDR,VHBR(V) 6.76.56.36.15.95.75.55.3 -50 VHBR VDDR
0 50 100 150 TEMPERATURE(°C) FIGURE13.UNDERVOLTAGELOCKOUTTHRESHOLDvsTEMPERATURE VDDH,VHBH(V) 0.70 0.65 0.60 VHBH 0.55 0.50 0.45 VDDH 0.40-50
0 50 100 150 TEMPERATURE(°C) FIGURE14.UNDERVOLTAGELOCKOUTHYSTERESISvsTEMPERATURE 55 tLPLH,tLPHL,tHPLH,tHPHL(ns) 50 tLPLH 45 40 tHPLH 353025 -50 tHPHL tLPHL
0 50 100 150 TEMPERATURE(°C) FIGURE15.ISL2110PROPAGATIONDELAYSvsTEMPERATURE 8.0 7.5 7.0 tMON 6.5 6.05.5tMOFF 5.0 4.5 4.0-50
0 50 100 150 TEMPERATURE(°C) FIGURE17.ISL2110DELAYMATCHINGvsTEMPERATURE tMON,tMOFF(ns) 55 tLPLH,tLPHL,tHPLH,tHPHL(ns) 50 tLPLH 45 40 tHPLH 35 tLPHL 3025 -50 tHPHL
0 50 100 150 TEMPERATURE(°C) FIGURE16.ISL2111PROPAGATIONDELAYSvsTEMPERATURE 10.09.5 9.08.58.07.5 7.06.56.05.55.0 4.54.0 -50 tMON tMOFF
0 50 100 150 TEMPERATURE(°C) FIGURE18.ISL2111DELAYMATCHINGvsTEMPERATURE tMON,tMOFF(ns) FN6295Rev.8.00April18,2022 Page10of16 ISL2110,ISL2111 TypicalPerformanceCurves(Continued) IOHL,IOHH(A) 3.5 3.0 2.5 2.0 1.5 1.0 0.5 00
2 4
6 8 10 12 VLO,VHO(V) FIGURE19.PEAKPULL-UPCURRENTvsOUTPUTVOLTAGE IOHL,IOHH(A) 4.5 4.0 3.5 3.0 2.5 2.0 1.5 1.0 0.5 00
2 4
6 8 10 12 VLO,VHO(V) FIGURE20.PEAKPULL-DOWNCURRENTvsOUTPUTVOLTAGE IDD,IHB(µA) 120 110 IDD 100 90 80 70 60 50 40 IHB 30 20 10 005101520 VDD,VHB(V) FIGURE21.ISL2110QUIESCENTCURRENTvsVOLTAGE IDD,IHB(µA) 320300280260240220200180160140120100 80604020 00 IDD IHB
5 10 15 20 VDD,VHB(V) FIGURE22.ISL2111QUIESCENTCURRENTvsVOLTAGE FORWARDCURRENT(A) 1.00 0.10 0.01 1.10-
3 1.10-
4 1.10-
5 1.10-
6 0.3 0.4 0.5 0.6 0.7 0.8 FORWARD
VOLTAGE(V) FIGURE23.BOOTSTRAPDIODEI-VCHARACTERISTICS VHSTOVSSVOLTAGE(V) 120 100 80 60 40 20 012 13 14 15 16 VDDTOVSSVOLTAGE(V) FIGURE24.VHSVOLTAGEvsVDDVOLTAGE FN6295Rev.8.00April18,2022 Page11of16 ISL2110,ISL2111 RevisionHistoryTherevisionhistoryprovidedisforinformationalpurposesonlyandisbelievedtobeurate,butnotwarranted. Pleasevisitourwebsitetomakesureyouhavethelatestrevision. DATE REVISION CHANGE April18,2022 FN6295.8 UpdatedtheOrderinginformationtableplywiththenewstandard,updatednotes.InAbsoluteMaximumRatings,addedVoltageonHOrelativetoHSandVoltageonLOrelativetoGND.UpdatedPODM8.15tothelatestversion:“Addedthecoplanarityspecintothedrawing.”RemovedRelatedLiteratureandAboutIntersilsections. Mar16,2017 FN6295.7 CorrectedthebrandingofFGISL2111BR4Zintheorderinformationtablefrom"2111BR4A"to"2111BR4Z".AddedRevisionHistorytableandAboutIntersilinformation. UpdatedL10.4x4PackageOutlineDrawingfromRev1toRev2.ChangesinceRev1is:“Tiebarnoteupdatefrom‘Tiebarshown(ifpresent)isanon-functionalfeature’to‘Tiebarshown(ifpresent)isanon-functionalfeatureandmaybelocatedonanyofthe4sides(orends)’”. UpdatedL12.4x4APackageOutlineDrawingfromRev1toRev3.ChangessinceRev1are:“Tiebarnoteupdatefrom‘Tiebarshown(ifpresent)isanon-functionalfeature’to‘Tiebarshown(ifpresent)isanon-functionalfeatureandmaybelocatedonanyofthe4sides(orends)’”;“BottomViewchangedfrom‘3.2REF’TO‘2.5REF’";“TypicalmendedLandPatternchangedfrom‘3.80’to‘3.75’";“UpdatedtonewPODformatbyremovingtablelistingdimensionsandmovingdimensionsontodrawing”,and“Addedtypicalmendedlandpattern”. UpdatedM8.15PackageOutlineDrawingfromRev3toRev4.ChangesinceRev3is:“ChangedNote1from1982to1994“. UpdatedL8.4x4PackageOutlineDrawingfromRev0toRev1.ChangesinceRev0is:“Tiebarnoteupdatefrom‘Tiebarshown(ifpresent)isanon-functionalfeature’to‘Tiebarshown(ifpresent)isanon-functionalfeatureandmaybelocatedonanyofthe4sides(orends)’”. FN6295Rev.8.00April18,2022 Page12of16 ISL2110,ISL2111 PackageOutlineDrawing L10.4x4 10LEADTHINDUALFLATNO-LEADPLASTICPACKAGE Rev2,4/15
A 4.00
B PIN#1INDEXAREA6 6PIN1INDEXAREA Forthemostrecentpackageoutlinedrawing,seeL10.4x4. 3.2REF 8X0.80BSC
1 5 10X0.40 4.00 2.60 (3.80) TOPVIEW(3.00) 0.15(4X) (10X0.60)(2.60) 10 0.75 3.00BOTTOMVIEW SIDEVIEW 60.10MCAB0.05MC 410X0.30 SEEDETAIL"X" 0.10CBASEPLANEC SEATINGPLANE0.08C 0.2REFC (8X0.8) (10X0.30) TYPICALRECOMMENDEDLANDPATTERN 0.00MIN.0.05MAX.DETAIL"X" NOTES:
1.Dimensionsareinmillimeters.Dimensionsin()forReferenceOnly.
2.DimensioningandtolerancingconformtoAMSEY14.5m-1994.
3.Unlessotherwisespecified,tolerance:Decimal±0.05
4.Dimensionbappliestothemetallizedterminalandismeasuredbetween0.15mmand0.30mmfromtheterminaltip.
5.Tiebarshown(ifpresent)isanon-functionalfeatureandmaybelocatedonanyofthe4sides(orends).
6.Theconfigurationofthepin#1identifierisoptional,butmustbelocatedwithinthezoneindicated.Thepin#1identifiermaybeeitheramoldormarkfeature. FN6295Rev.8.00April18,2022 Page13of16 ISL2110,ISL2111 PackageOutlineDrawing L12.4x4A 12LEADDUALFLATNO-LEADPLASTICPACKAGE Rev3,3/15
A 4.00
B PIN#1INDEXAREA6 6PIN1INDEXAREA Forthemostrecentpackageoutlinedrawing,seeL12.4x4A. 2.5REF10X0.50BSC
1 6 12X0.45 4.00 1.58 (3.75) TOPVIEW(2.80) 0.15(4X) (12X0.65)(1.58) 121.00MAX 2.80BOTTOMVIEW SIDEVIEW 70.10MCAB0.05MC 412X0.25 SEEDETAIL"X"0.10C BASEPLANECSEATINGPLANE0.08C 0.2REFC (10X0.5) (12X0.25) TYPICALRECOMMENDEDLANDPATTERN 0.00MIN.0.05MAX.DETAIL"X" NOTES:
1.Dimensionsareinmillimeters.Dimensionsin()forReferenceOnly.
2.DimensioningandtolerancingconformtoAMSEY14.5m-1994.
3.Unlessotherwisespecified,tolerance:Decimal±0.05
4.Leadwidthappliestothemetallizedterminalandismeasuredbetween0.15mmand0.30mmfromtheterminaltip.
5.Tiebarshown(ifpresent)isanon-functionalfeatureandmaybelocatedonanyofthe4sides(orends).
6.Theconfigurationofthepin#1identifierisoptional,butmustbelocatedwithinthezoneindicated.Thepin#1identifiermaybeeitheramoldormarkfeature. FN6295Rev.8.00April18,2022 Page14of16 ISL2110,ISL2111 PackageOutlineDrawing M8.15 8LEADNARROWBODYSMALLOUTLINEPLASTICPACKAGERev5,4/21 Forthemostrecentpackageoutlinedrawing,seeM8.15. FN6295Rev.8.00April18,2022 Page15of16 ISL2110,ISL2111 PackageOutlineDrawing L8.4x4 8LEADDUALFLATNO-LEADPLASTICPACKAGE Rev1,03/15
A 4.00
B PIN#1INDEXAREA6 6PIN1INDEXAREA 4.00 Forthemostrecentpackageoutlinedrawing,seeL8.4x4. 2.4REF 6X0.80BSC
1 4 8X0.40±0.10 2.50±0.10 (3.80) TOPVIEW(3.45) 0.15(4X) (8X0.60)(2.50)
8 5 3.45±0.10BOTTOMVIEW 0.9±0.10 SIDEVIEW 0.10MCAB0.05MC48X0.30 SEEDETAIL"X" 0.10CBASEPLANEC SEATINGPLANE0.08C 0.2REFC (6X0.8) (8X0.30) TYPICALRECOMMENDEDLANDPATTERN 0.00MIN.0.05MAX. DETAIL"X" NOTES:
1.Dimensionsareinmillimeters.Dimensionsin()forReferenceOnly.
2.DimensioningandtolerancingconformtoASMEY14.5m-1994.3.Unlessotherwisespecified,tolerance:Decimal±0.054.Dimensionappliestothemetallizedterminalandismeasured between0.15mmand0.30mmfromtheterminaltip.5.Tiebarshown(ifpresent)isanon-functionalfeatureandmay belocatedonanyofthe4sides(orends).6.Theconfigurationofthepin#1identifierisoptional,butmustbe locatedwithinthezoneindicated.Thepin#1identifiermaybeeitheramoldormarkfeature. FN6295Rev.8.00April18,2022 Page16of16 IMPORTANTNOTICEANDDISCLAIMER RENESASELECTRONICSCORPORATIONANDITSSUBSIDIARIES(“RENESAS”)PROVIDESTECHNICALSPECIFICATIONSANDRELIABILITYDATA(INCLUDINGDATASHEETS),DESIGNRESOURCES(INCLUDINGREFERENCEDESIGNS),APPLICATIONOROTHERDESIGNADVICE,WEBTOOLS,SAFETYINFORMATION,ANDOTHERRESOURCES“ASIS”ANDWITHALLFAULTS,ANDDISCLAIMSALLWARRANTIES,EXPRESSORIMPLIED,INCLUDING,WITHOUTLIMITATION,ANYIMPLIEDWARRANTIESOFMERCHANTABILITY,FITNESSFORAPARTICULARPURPOSE,ORNON-INFRINGEMENTOFTHIRDPARTYINTELLECTUALPROPERTYRIGHTS. TheseresourcesareintendedfordevelopersskilledintheartdesigningwithRenesasproducts.Youaresolelyresponsiblefor(1)selectingtheappropriateproductsforyourapplication,(2)designing,validating,andtestingyourapplication,and(3)ensuringyourapplicationmeetsapplicablestandards,andanyothersafety,security,orotherrequirements.Theseresourcesaresubjecttochangewithoutnotice.RenesasgrantsyoupermissiontousetheseresourcesonlyfordevelopmentofanapplicationthatusesRenesasproducts.Otherreproductionoruseoftheseresourcesisstrictlyprohibited.NolicenseisgrantedtoanyotherRenesasintellectualpropertyortoanythirdpartyintellectualproperty.Renesasdisclaimsresponsibilityfor,andyouwillfullyindemnifyRenesasanditsrepresentativesagainst,anyclaims,damages,costs,losses,orliabilitiesarisingoutofyouruseoftheseresources.Renesas'productsareprovidedonlysubjecttoRenesas'TermsandConditionsofSaleorotherapplicabletermsagreedtoinwriting.NouseofanyRenesasresourcesexpandsorotherwisealtersanyapplicablewarrantiesorwarrantydisclaimersfortheseproducts. (Rev.1.0Mar2020) CorporateHeadquarters TOYOSUFORESIA,3-2-24Toyosu,Koto-ku,Tokyo135-0061,Japan Trademarks RenesasandtheRenesaslogoaretrademarksofRenesasElectronicsCorporation.Alltrademarksandregisteredtrademarksarethepropertyoftheirrespectiveowners. ContactInformation Forfurtherinformationonaproduct,technology,themostup-to-dateversionofadocument,oryournearestsalesoffice,pleasevisit:/contact/
声明：
该资讯来自于互联网网友发布，如有侵犯您的权益请联系我们。
